HFA70NC60CSM

www.DataSheet4U.com PD -2.459 rev. B 01/99 HFA70NC60CSM HEXFRED Features Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters TM Ultrafast, Soft Recovery Diode VR = 600V VF(typ.)ƒ = 1.2V IF(AV) = 70A Qrr (typ.) = 210nC IRRM(typ.) = 6A trr(typ.) = 30ns di(rec)M/dt (typ.)ƒ = 180A/µs Description HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. TM SM D-61-8 Absolute Maximum Ratings (per Leg) Parameter VR IF @ TC = 25°C IF @ TC = 100°C IFSM EAS PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Cathode-to-Anode Voltage Continuous Forward Current Continuous Forward Current Single Pulse Forward Current  Non-Repetitive Avalanche Energy ‚ Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Max. 600 56 27 200 220 150 59 -55 to +150 300 (0.063 in. (1.6mm) from case) Units V A µJ W °C Thermal - Mechanical Characteristics Parameter RthJC Wt Junction-to-Case, Single Leg Conducting Junction-to-Case, Bot...