STP80NS04ZB

www.DataSheet4U.com N-CHANNEL CLAMPED 7.5mΩ - 80A TO-220 FULLY PROTECTED MESH OVERLAY™ MOSFET PRELIMINARY DATA TYPE STP80NS04ZB s s s s STP80NS04ZB VDSS CLAMPED RDS(on) <0.008 Ω ID 80 A TYPICAL RDS(on) = 0.0075 Ω 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE 175 oC MAXIMUM JUNCTION TEMPERATURE 1 3 2 DESCRIPTION This fully clamped Mosfet is produced by using the latest advanced Company’s Mesh Overlay process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions such as those encountered in the automotive environment. Any other application requiring extra ruggedness is also recommended. TO-220 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s ABS, SOLENOID DRIVERS s MOTOR CONTROL s DC-DC CONVERTERS ABSOLUTE MAXIMUM RATINGS Symbol VDS VDG VGS ID ID IDG IGS IDM() Ptot VESD(G-S) VESD(G-D) VESD(D-S) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Gate Current (continuous) Gate SourceCurrent (continuous) Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate-Source ESD (HBM - C = 100pF, R=1.5 kΩ) Gate-Drain ESD (HBM - C = 100pF, R=1.5 kΩ) Drain-source ESD (HBM - C = 100pF, R=1.5 kΩ) Storage Temperature Max. Operating Junction Temperature Value CLAMPED CLAMPED CLAMPED 80 60 ±...