N-CHANNEL POWER MOSFET
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STSJ100NH3LL
N-CHANNEL 30 V - 0.0032 Ω - 25 A PowerSO-8™ STripFET™ III MOSFET FOR DC-DC CONVERSION
...
Description
www.DataSheet4U.com
STSJ100NH3LL
N-CHANNEL 30 V - 0.0032 Ω - 25 A PowerSO-8™ STripFET™ III MOSFET FOR DC-DC CONVERSION
Table 1: General Features
TYPE STSJ100NH3LL
■ ■ ■ ■ ■
Figure 1: Package
RDS(on) < 0.0035Ω ID 25A
VDSS 30V
TYPICAL RDS(on) = 0.0032Ω @ 10V OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5V SWITCHING LOSSES REDUCED LOW THRESHOLD DEVICE IMPROVED JUNCTION-CASE THERMAL RESISTANCE PowerSO-8™
DESCRIPTION The STSJ100NH3LL utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This process coupled to unique metallization techniques realizes the most advanced low voltage MOSFET in SO-8 ever produced. The exposed slug reduces the Rthj-c improving the current capability.
Figure 2: Internal Schematic Diagram
APPLICATIONS ■ SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS FOR MOBILE PCs
DRAIN CONTACT ALSO ON THE BACKSIDE
Table 2: Order Codes
SALES TYPE STSJ100NH3LL MARKING 100H3LLPACKAGE PowerSO-8 PACKAGING TAPE & REEL
Rev. 5 November 2005 1/11
STSJ100NH3LL
Table 3: Absolute Maximum ratings
Symbol VDS VGS ID(2) ID(1) ID IDM(3) Ptot(2) Ptot(1) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Total Dissipation at TC = 25°C Parameter Drain-source Voltage (VGS = 0) Value 30 ± 16 100 25 15.6 100 70 3 Unit V V A A A A W W
Table 4: Thermal Data
Rthj-c Rthj-pcb(4) Tj Tstg The...
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