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BF256A

ON Semiconductor

N-Channel MOSFET

www.DataSheet4U.com BF256A BF256A is a Preferred Device JFET - General Purpose N–Channel N–Channel Junction Field Effe...


ON Semiconductor

BF256A

File Download Download BF256A Datasheet


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www.DataSheet4U.com BF256A BF256A is a Preferred Device JFET - General Purpose N–Channel N–Channel Junction Field Effect Transistor designed for VHF and UHF applications. http://onsemi.com Low Cost TO–92 Type Package Forward Transfer Admittance, Yfs = 4.5 mmhos (Min) Transfer Capacitance – Crss = 0.7 (Typ) Power Gain at f = 800 MHz, Typ. = 11 dB 1 DRAIN 3 GATE MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage Gate–Source Voltage Forward Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Channel Temperature Range Symbol VDS VDG VGS IG(f) PD 360 2.88 Tchannel, Tstg –65 to +150 mW mW/°C °C BF 256A YWW Value 30 30 30 10 Unit Vdc Vdc Vdc mAdc 1 2 3 TO–92 CASE 29 STYLE 5 2 SOURCE MARKING DIAGRAMS 500 PD, MAXIMUM CONTINUOUS POWER DISSIPATION (mW) Y WW = Year = Work Week 400 ORDERING INFORMATION 300 Device BF256A 200 Preferred devices are recommended choices for future use and best overall value. Package TO–92 Shipping 5000 Units/Box 100 0 0 25 50 75 100 125 150 175 200 FREE AIR TEMPERATURE (°C) Figure 1. Power Derating Curve © Semiconductor Components Industries, LLC, 2001 1 September, 2001 – Rev. 3 Publication Order Number: BF256A/D BF256A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Gate–Source Breakdown Voltage Gate–Source Voltage Gate Reverse Current (–IG = –1.0 µAdc, VDS = 0) (VDS = 15 Vdc, ID = 200 µA) (–VGS = 20 Vdc, V...




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