www.DataSheet4U.com
BF256A
BF256A is a Preferred Device
JFET - General Purpose
N–Channel
N–Channel Junction Field Effe...
www.DataSheet4U.com
BF256A
BF256A is a Preferred Device
JFET - General Purpose
N–Channel
N–Channel Junction Field Effect
Transistor designed for VHF and UHF applications.
http://onsemi.com
Low Cost TO–92 Type Package Forward Transfer Admittance, Yfs = 4.5 mmhos (Min) Transfer Capacitance – Crss = 0.7 (Typ) Power Gain at f = 800 MHz, Typ. = 11 dB
1 DRAIN
3 GATE
MAXIMUM RATINGS
Rating Drain–Source Voltage Drain–Gate Voltage Gate–Source Voltage Forward Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Channel Temperature Range Symbol VDS VDG VGS IG(f) PD 360 2.88 Tchannel, Tstg –65 to +150 mW mW/°C °C BF 256A YWW Value 30 30 30 10 Unit Vdc Vdc Vdc mAdc 1 2 3 TO–92 CASE 29 STYLE 5 2 SOURCE
MARKING DIAGRAMS
500 PD, MAXIMUM CONTINUOUS POWER DISSIPATION (mW)
Y WW
= Year = Work Week
400
ORDERING INFORMATION
300 Device BF256A 200
Preferred devices are recommended choices for future use and best overall value.
Package TO–92
Shipping 5000 Units/Box
100 0 0 25 50 75 100 125 150 175 200 FREE AIR TEMPERATURE (°C)
Figure 1. Power Derating Curve
© Semiconductor Components Industries, LLC, 2001
1
September, 2001 – Rev. 3
Publication Order Number: BF256A/D
BF256A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage Gate–Source Voltage Gate Reverse Current (–IG = –1.0 µAdc, VDS = 0) (VDS = 15 Vdc, ID = 200 µA) (–VGS = 20 Vdc, V...