BS170

Field Effect Transistor N-Channel, Enhancement Mode BS170, MMBF170 General Description These N−Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500 mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features High Density Cell Design for Low RDS(ON) Voltage Controlled Small Signal Switch Rugged and Reliable High Saturation Current Capability These are Pb−Free Devices DATA SHEET www.onsemi.com BS170 DGS TO−92 3 4.825x4.76 CASE 135AN D GS TO−92 3 4.83x4.76 LEADFORMED CASE 135AR MMBF170 D G S SOT−23 CASE 318−08 Drain Gate Source MARKING DIAGRAM BS170 ALYW 6ZM 1 BS170, 6Z = Device Code A = Assembly Plant Code L = Wafer Lot Number YW = Assembly Start Week M = Date Code © Semiconductor Components Industries, LLC, 2010 April, 2022 − Rev. 7 ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. 1 Publication Order Number: MMBF170/D BS170, MMBF170 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter BS170 MMBF170 Unit VDSS VDGR VGSS ID Drain−Source Voltage Drain−Gate Voltage (RGS ≤ 1 MW) Gate...