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BSS138LT1

ON Semiconductor

Power MOSFET

BSS138LT1 Power MOSFET 200 mA, 50 V N−Channel SOT−23 Typical applications are DC−DC converters, power management in por...


ON Semiconductor

BSS138LT1

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Description
BSS138LT1 Power MOSFET 200 mA, 50 V N−Channel SOT−23 Typical applications are DC−DC converters, power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features Low Threshold Voltage (VGS(th): 0.5 V−1.5 V) Makes it Ideal for Low Voltage Applications Miniature SOT−23 Surface Mount Package Saves Board Space Pb−Free Packages are Available http://onsemi.com 200 mA, 50 V RDS(on) = 3.5 W N−Channel 3 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (tp ≤ 10 ms) Total Power Dissipation @ TA = 25°C Operating and Storage Temperature Range VDSS VGS ID IDM PD TJ, Tstg 50 ± 20 200 800 225 − 55 to 150 Vdc Vdc mA mW °C Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W Maximum Lead Temperature for Soldering Purposes, for 10 seconds TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1 2 3 1 2 SOT−23 CASE 318 STYLE 21 MARKING DIAGRAM J1 M G G 1 J1 = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon m...




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