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BYW80-200 Dataheets PDF



Part Number BYW80-200
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power Rectifiers
Datasheet BYW80-200 DatasheetBYW80-200 Datasheet (PDF)

BYW80-200 SWITCHMODEt Power Rectifiers This state−of−the−art device is designed for use in switching power supplies, inverters and as free wheeling diodes. Features • Ultrafast 35 Nanosecond Recovery Time • 175°C Operating Junction Temperature • Popular TO−220 Package • Epoxy Meets UL 94 V−0 @ 0.125 in • Low Forward Voltage • Low Leakage Current • High Temperature Glass Passivated Junction • Pb−Free Package is Available* Mechanical Characteristics • Case: Epoxy, Molded • Weight: 1.9 Grams (Appr.

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BYW80-200 SWITCHMODEt Power Rectifiers This state−of−the−art device is designed for use in switching power supplies, inverters and as free wheeling diodes. Features • Ultrafast 35 Nanosecond Recovery Time • 175°C Operating Junction Temperature • Popular TO−220 Package • Epoxy Meets UL 94 V−0 @ 0.125 in • Low Forward Voltage • Low Leakage Current • High Temperature Glass Passivated Junction • Pb−Free Package is Available* Mechanical Characteristics • Case: Epoxy, Molded • Weight: 1.9 Grams (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds MAXIMUM RATINGS Rating Symbol Values Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM 200 V VRWM VR Average Rectified Forward Current IF(AV) 8.0 A Total Device, (Rated VR), TC = 150°C Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz), TC = 150°C Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFM IFSM 16 A 100 A Operating Junction Temperature and Storage Temperature Range TJ, Tstg −65 to +175 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. http://onsemi.com ULTRAFAST RECTIFIERS 8.0 AMPERES, 200 VOLTS 1 4 3 4 MARKING DIAGRAM 1 3 CASE 221B TO−220B PLASTIC AY WWG BYW80-200 KA A Y WW BYW80−200 G KA = Assembly Location = Year = Work Week = Device Code = Pb−Free Package = Diode Polarity ORDERING INFORMATION Device BYW80−200 BYW80−200G Package TO−220 TO−220 (Pb−Free) Shipping 50 Units/Rail 50 Units/Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2008 June, 2008 − Rev. 3 1 Publication Order Number: BYW80/D BYW80−200 THERMAL CHARACTERISTICS Rating Maximum Thermal Resistance, Junction−to−Case ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 1) (iF = 7.0 Amps, TC = 100°C) (iF = 22 Amps, TC = 25°C) Maximum Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TJ = 100°C) (Rated dc Voltage, TJ = 25°C) Maximum Reverse Recovery Time (IF = 1.0 Amp, di/dt = 50 Amps/ms) (IF = 0.5 Amp, iR = 1.0 Amp, IREC = 0.25 Amp) 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. Symbol RqJC vF iR trr Values 3.0 0.85 1.25 1 0.01 35 25 Unit °C/W V mA ns iF, INSTANTANEOUS FORWARD CURRENT (AMPS) 100 70 50 30 20 10 7.0 5.0 3.0 2.0 TJ = 175°C 100°C 25°C 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 vF, INSTANTANEOUS VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage 1.2 IF(AV), AVERAGE FORWARD CURRENT (AMPS) IR, REVERSE CURRENT (mA) 1000 100 TJ = 175°C 10 100°C 1.0 25°C 0.1 0.01 0 20 40 60 80 100 120 140 160 180 200 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Typical Reverse Current* * The curves shown are typical for the highest voltage device in the grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if VR is sufficiently below rated VR. 10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 140 dc SQUARE WAVE RATED VR APPLIED 150 160 170 TC, CASE TEMPERATURE (°C) Figure 3. Current Derating, Case 180 http://onsemi.com 2 IF(AV), AVERAGE FORWARD CURRENT (AMPS) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) BYW80−200 PF(AV), AVERAGE POWER DISSIPATION (WATTS) 14 12 dc 10 RqJA = 16°C/W RqJA = 60°C/W (NO HEAT SINK) 8.0 SQUARE WAVE 6.0 4.0 dc 2.0 SQUARE WAVE 0 0 20 40 60 80 100 120 140 160 180 200 TA, AMBIENT TEMPERATURE (°C) Figure 4. Current Derating, Ambient 10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 TJ = 175°C SQUARE WAVE dc 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 5. Power Dissipation 10 1.0 D = 0.5 0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.02 0.1 0.05 0.01 SINGLE PULSE 0.05 0.1 0.2 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 ZqJC(t) = r(t) RqJC RqJC = 1.5 °C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT T1 TJ(pk) - TC = P(pk) ZqJC(t) 0.5 1.0 2.0 5.0 10 t, TIME (ms) Figure 6. Thermal Response 20 50 100 200 500 1000 1000 C, CAPACITANCE (pF) 300 TJ = 25°C 100 30 10 1.0 10 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Typical Capacitance 100 http://onsemi.com 3 QB 4 13 H F A K LD G BYW80−200 PACKAGE DIMENSIONS TO−220 CASE 221B−04 ISSUE E C TS U R J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES DIM MIN MAX A 0.595 0.620 B 0.380 0.405 C 0.160 0.190 D 0.025 0.035 F 0.142 0.161 G 0.190 0.210 H 0.110 0.130 J 0.014 0.025 K 0.500 0.562 L 0.045 0.060 Q 0.100 0.120 R 0.080 0.110 S 0.045 0.055 T 0.235 0.255 U 0.000 0.050.


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