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DTA144TT1 Dataheets PDF



Part Number DTA144TT1
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Bias Resistor Transistor PNP Silicon Surface Mount Transistor
Datasheet DTA144TT1 DatasheetDTA144TT1 Datasheet (PDF)

www.DataSheet4U.com DTA144TT1 Preferred Device Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integra.

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www.DataSheet4U.com DTA144TT1 Preferred Device Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC−59 package which is designed for low power surface mount applications. Features http://onsemi.com PNP SILICON BIAS RESISTOR TRANSISTOR PIN 3 COLLECTOR (OUTPUT) R1 PIN 1 BASE (INPUT) R2 • • • • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count Moisture Sensitivity Level: 1 ESD Rating: Human Body Model: Class 1 Machine Model: Class B The SC−59 package can be soldered using wave or reflow. The modified gull−winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Pb−Free Package is Available PIN 2 EMITTER (GROUND) 3 1 2 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc SC−59 CASE 318D PLASTIC MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Lead Junction and Storage Temperature Range Symbol PD Max 230 (Note 1) 338 (Note 2) 1.8 (Note 1) 2.7 (Note 2) 540 (Note 1) 370 (Note 2) 264 (Note 1) 287 (Note 2) − 55 to +150 Unit mW °C/W °C/W °C/W °C 1 6T M G G RqJA RqJL TJ, Tstg 6T = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 x 1.0 inch Pad ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 3 1 Publication Order Number: DTA144TT1/D DTA144TT1 DEVICE MARKING AND RESISTOR VALUES Device DTA144TT1 DTA144TT1G Marking 6T 6T R1 (K) 47 47 R2 (K) ∞ ∞ Package SC−59 SC−59 (Pb−Free) Shipping† 3000/Tape & Reel 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector−Base Cutoff Current (VCB = 50 V, IE = 0) Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter−Base Cutoff Current (VEB = 6.0 V, IC = 0) Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector−Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) ON CHARACTERISTICS (Note 3) DC Current Gain (VCE = 10 V, IC = 5.0 mA) Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 1.0 mA) Output Voltage (on) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) Output Voltage (off) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) Input Resistor 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% hFE VCE(sat) VOL VOH R1 160 − − 4.9 32.9 350 − − − 47 − 0.25 0.2 − 61.1 Vdc Vdc Vdc kW ICBO ICEO IEBO V(BR)CBO V(BR)CEO − − − 50 50 − − − − − 100 500 0.2 − − nAdc nAdc mAdc Vdc Vdc Symbol Min Typ Max Unit 350 PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 0 −50 0 50 100 TA, AMBIENT TEMPERATURE (5°C) 150 RqJA= 370°C/W Figure 1. Derating Curve http://onsemi.com 2 DTA144TT1 PACKAGE DIMENSIONS SC−59 CASE 318D−04 ISSUE G D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. HE 3 2 1 E b e C L DIM A A1 b c D E e L HE MIN 1.00 0.01 0.35 0.09 2.70 1.30 1.70 0.20 2.50 MILLIMETERS NOM MAX 1.15 1.30 0.06 0.10 0.43 0.50 0.14 0.18 2.90 3.10 1.50 1.70 1.90 2.10 0.40 0.60 2.80 3.00 MIN 0.039 0.001 0.014 0.003 0.106 0.051 0.067 0.008 0.099 INCHES NOM 0.045 0.002 0.017 0.005 0.114 0.059 0.075 0.016 0.110 MAX 0.051 0.004 0.020 0.007 0.122 0.067 0.083 0.024 0.118 A A1 SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.4 0.094 1.0 0.039 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of S.


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