Document
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EMA6DXV5T1, EMA6DXV5T5
Preferred Devices
Dual Common Emitter Bias Resistor Transistor
PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT−553 package which is designed for low power surface mount applications.
http://onsemi.com
PNP SILICON BIAS RESISTOR TRANSISTOR
EMA6 / UMA6N (3) (2) (1)
• • • • • • •
Simplifies Circuit Design Reduces Board Space Reduces Component Count Moisture Sensitivity Level: 1 ESD Rating − Human Body Model: Class 1 − Machine Model: Class B Available in 7 Inch Tape and Reel Lead−Free Solder Plating
R2
R1
(4)
(5) / (6)
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc
5 1 SOT−553 CASE 463B
MARKING DIAGRAM
5
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance − Junction-to-Ambient Thermal Resistance − Junction-to-Lead Junction and Storage Temperature Range Symbol PD Max 230 (Note 1) 338 (Note 2) 1.8 (Note 1) 2.7 (Note 2) 540 (Note 1) 370 (Note 2) 264 (Note 1) 287 (Note 2) −55 to +150 Unit mW °C/W °C/W °C/W °C
UD M 1 UD= Specific Device Code M = Date Code
RqJA RqJL TJ, Tstg
ORDERING INFORMATION
Device EMA6DXV5T1 EMA6DXV5T5 Package SOT−553 SOT−553 Shipping 4 mm pitch 4000/Tape & Reel 2 mm pitch 8000/Tape & Reel
DEVICE MARKING AND RESISTOR VALUES
Device EMA6DXV5T1 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 x 1.0 inch Pad Marking UD R1 (K) 47 R2 (K) ∞
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2003
1
September, 2003 − Rev. 0
Publication Order Number: EMA6DXV5T1/D
EMA6DXV5T1, EMA6DXV5T5
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector−Base Cutoff Current (VCB = 50 V, IE = 0) Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter−Base Cutoff Current (VEB = 6.0 V, IC = 0) Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector−Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) ON CHARACTERISTICS (Note 3) DC Current Gain (VCE = 10 V, IC = 5.0 mA) Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 1.0 mA) Output Voltage (on) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) Output Voltage (off) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) Input Resistor 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% hFE VCE(sat) VOL VOH R1 160 − − 4.9 32.9 350 − − − 47 − 0.25 0.2 − 61.1.