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EMA6DXV5T5 Dataheets PDF



Part Number EMA6DXV5T5
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description (EMA6DXV5T1 / EMA6DXV5T5) Dual Common Emitter Bias Resistor Transistor PNP Silicon Surface Mount Transistors
Datasheet EMA6DXV5T5 DatasheetEMA6DXV5T5 Datasheet (PDF)

www.DataSheet4U.com EMA6DXV5T1, EMA6DXV5T5 Preferred Devices Dual Common Emitter Bias Resistor Transistor PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates the.

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www.DataSheet4U.com EMA6DXV5T1, EMA6DXV5T5 Preferred Devices Dual Common Emitter Bias Resistor Transistor PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT−553 package which is designed for low power surface mount applications. http://onsemi.com PNP SILICON BIAS RESISTOR TRANSISTOR EMA6 / UMA6N (3) (2) (1) • • • • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count Moisture Sensitivity Level: 1 ESD Rating − Human Body Model: Class 1 − Machine Model: Class B Available in 7 Inch Tape and Reel Lead−Free Solder Plating R2 R1 (4) (5) / (6) MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc 5 1 SOT−553 CASE 463B MARKING DIAGRAM 5 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance − Junction-to-Ambient Thermal Resistance − Junction-to-Lead Junction and Storage Temperature Range Symbol PD Max 230 (Note 1) 338 (Note 2) 1.8 (Note 1) 2.7 (Note 2) 540 (Note 1) 370 (Note 2) 264 (Note 1) 287 (Note 2) −55 to +150 Unit mW °C/W °C/W °C/W °C UD M 1 UD= Specific Device Code M = Date Code RqJA RqJL TJ, Tstg ORDERING INFORMATION Device EMA6DXV5T1 EMA6DXV5T5 Package SOT−553 SOT−553 Shipping 4 mm pitch 4000/Tape & Reel 2 mm pitch 8000/Tape & Reel DEVICE MARKING AND RESISTOR VALUES Device EMA6DXV5T1 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 x 1.0 inch Pad Marking UD R1 (K) 47 R2 (K) ∞ Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2003 1 September, 2003 − Rev. 0 Publication Order Number: EMA6DXV5T1/D EMA6DXV5T1, EMA6DXV5T5 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector−Base Cutoff Current (VCB = 50 V, IE = 0) Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter−Base Cutoff Current (VEB = 6.0 V, IC = 0) Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector−Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) ON CHARACTERISTICS (Note 3) DC Current Gain (VCE = 10 V, IC = 5.0 mA) Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 1.0 mA) Output Voltage (on) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) Output Voltage (off) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) Input Resistor 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% hFE VCE(sat) VOL VOH R1 160 − − 4.9 32.9 350 − − − 47 − 0.25 0.2 − 61.1.


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