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EMF23XV6T5 Dual Transistor − Power Management
NPN/PNP Dual (Complimentary)
Features http://onsemi.c...
www.DataSheet4U.com
EMF23XV6T5 Dual
Transistor − Power Management
NPN/
PNP Dual (Complimentary)
Features http://onsemi.com
Low VCE(SAT), t0.5 V These are Pb−Free Devices
MAXIMUM RATINGS
Q1 Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Q2 Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Symbol VCEO VCBO VEBO IC Value −60 −50 −6.0 −100 Unit Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc
(3) R1
(2)
(1)
Q1 R2 (4)
Q2
(5)
(6)
6 V V V mAdc SOT−563 CASE 463A STYLE 1 1
THERMAL CHARACTERISTICS
Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Range RqJA TJ, Tstg RqJA Symbol PD Max 357 (Note 1) 2.9 (Note 1) 350 (Note 1) Max 500 (Note 1) 4.0 (Note 1) 250 (Note 1) −55 to +150 Unit mW mW/°C °C/W
MARKING DIAGRAM
1 Symbol PD Unit mW mW/°C °C/W °C
UW M G G
UW = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
Device EMF23XV6T5 EMF23XV6T5G Package Shipping †
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If ...