DatasheetsPDF.com

FDP14N30 Dataheets PDF



Part Number FDP14N30
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDP14N30 DatasheetFDP14N30 Datasheet (PDF)

www.DataSheet4U.com FDP14N30 / FDPF14N30 300V N-Channel MOSFET FDP14N30 / FDPF14N30 300V N-Channel MOSFET Features • 14A, 300V, RDS(on) = 0.29Ω @VGS = 10 V • Low gate charge ( typical 18 nC) • Low Crss ( typical 17 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability UniFET Description February 2007 TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has b.

  FDP14N30   FDP14N30



Document
www.DataSheet4U.com FDP14N30 / FDPF14N30 300V N-Channel MOSFET FDP14N30 / FDPF14N30 300V N-Channel MOSFET Features • 14A, 300V, RDS(on) = 0.29Ω @VGS = 10 V • Low gate charge ( typical 18 nC) • Low Crss ( typical 17 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability UniFET Description February 2007 TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G G DS TO-220 FDP Series GD S TO-220F FDPF Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) FDP14N30 300 14 8.4 56 ±30 330 14 14 4.5 140 1.12 FDPF14N30 14 * 8.4 ∗ 56 ∗ Unit V A A A V mJ A mJ V/ns 35 0.28 -55 to +150 300 W W/°C °C °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds * Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient FDP14N30 0.89 0.5 62.5 FDPF14N30 3.56 -62.5 Unit °C/W °C/W °C/W ©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDP14N30 / FDPF14N30 Rev. A FDP14N30 / FDPF14N30 300V N-Channel MOSFET Package Marking and Ordering Information Device Marking FDP14N30 FDPF14N30 Device FDP14N30 FDPF14N30 Package TO-220 TO-220F TC = 25°C unless otherwise noted Reel Size - Tape Width - Quantity 50 50 Electrical Characteristics Symbol Off Characteristics BVDSS ΔBVDSS / ΔTJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr NOTES: Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Conditions VGS = 0V, ID = 250μA ID = 250μA, Referenced to 25°C VDS = 300V, VGS = 0V VDS = 240V, TC = 125°C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250μA VGS = 10V, .


ESD5Z7.0T1 FDP14N30 FDPF14N30


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)