Document
FDPF14N30 — N-Channel UniFETTM MOSFET
FDPF14N30
N-Channel UniFETTM MOSFET
300 V, 14 A, 290 mΩ
Features
• RDS(on) = 290 mΩ (Max.) @ VGS = 10 V, ID = 7 A • Low Gate Charge (Typ. 18 nC) • Low Crss (Typ. 17 pF) • 100% Avalanche Tested • Improved dv/dt Capability
Applications
• PDP TV • Uninterruptible Power Supply
November 2013
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
D
GDS
G
TO-220F
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
Parameter
VDSS ID
IDM VGSS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2) (Note 1) (Note 1) (Note 3)
PD
Power Dissipation
(TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature.
FDPF14N30 300 14 * 8.4 * 56 * ±30 330 14 14 4.5 35 0.28
-55 to +150 300
Thermal Characteristics
Symbol
RθJC RθJA
Parameter Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Junction-to-Ambient, Max.
FDPF14N30 3.56 62.5
Unit V A A A V mJ A mJ
V/ns W
W/°C °C °C
Unit
°C/W
©2007 Fairchild Semiconductor Corporation
1
FDPF14N30 Rev. C1
www.fairchildsemi.com
FDPF14N30 — N-Channel UniFETTM MOSFET
Package Marking and Ordering Information
Part Number FDPF14N30
Top Mark FDPF14N30
Package TO-220F
Packing Method Tube
Reel Size N/A
Tape Width N/A
Quantity 50 units
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Off Characteristics
BVDSS ΔBVDSS
/ ΔTJ IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0 V, ID = 250 μA
ID = 250 μA, Referenced to 25°C
VDS = 300 V, VGS = 0 V VDS = 240 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V
VGS(th) RDS(on)
Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS = VGS, ID = 250 μA VGS = 10 V, ID = 7 A
gFS
Forward Transconductance
Dynamic Characteristics
VDS = 40 V, ID = 7 A
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
td(on) tr
Turn-On Delay Time Turn-On Rise Time
VDD = 150 V, ID = 14 A, VGS = 10 V, RG = 25 Ω
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS = 240 V, ID = 14 A, VGS = 10 V
Qgd
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
(Note 4) (Note 4)
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 14 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 14 A, dIF/dt =100 A/μs
Min.
300 ------
3.0 ---
----
--------
------
Typ.
-0.3 -----
-0.24 10.5
815 150 17
20 105 30 75 18 4.5
8
---235 1.6
Max. Unit
--
--
1 10 100 -100
V
V/°C
μA μA nA nA
5.0
V
0.29
Ω
--
S
1060 pF
195 pF
25
pF
50
ns
120
ns
70
ns
160
ns
25
nC
--
nC
--
nC
14
A
56
A
1.4
V
--
ns
--
μC
Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 2.8 mH, IAS = 14 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 14 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics.
©2007 Fairchild Semiconductor Corporation
2
FDPF14N30 Rev. C1
www.fairchildsemi.com
FDPF14N30 — N-Channel UniFETTM MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
102 Top :
VGS 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
101
6.0 V Bottom : 5.5 V
ID, Drain Current [A]
100
10-1 10-1
* Notes :
1. 250μs Pulse Test 2. TC = 25oC
100
101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
DS(ON) R [Ω], Drain-Source On-Resistance
1.3
1.2
1.1
1.0
0.9
VGS = 10V
0.8
0.7
0.6
0.5
VGS = 20V
0.4
0.3
0.2
* Note : TJ = 25oC
0.1 0
5
10
15
20
25
30
35
40
45
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
2000
1000
Coss Ciss
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
* Note :
Crss
1. VGS = 0 V 2. f .