N-Channel MOSFET. FDPF14N30 Datasheet

FDPF14N30 Datasheet PDF, Equivalent


Part Number

FDPF14N30

Description

N-Channel MOSFET

Manufacture

Fairchild Semiconductor

Total Page 10 Pages
PDF Download
Download FDPF14N30 Datasheet PDF


FDPF14N30 Datasheet
www.DataSheet4U.com
FDP14N30 / FDPF14N30
300V N-Channel MOSFET
Features
• 14A, 300V, RDS(on) = 0.29Ω @VGS = 10 V
• Low gate charge ( typical 18 nC)
• Low Crss ( typical 17 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
February 2007
UniFETTM
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
GDS
TO-220
FDP Series
GD S
TO-220F
FDPF Series
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FDP14N30 FDPF14N30
300
14 14 *
8.4 8.4
56 56
±30
330
14
14
4.5
140 35
1.12 0.28
-55 to +150
300
FDP14N30
0.89
0.5
62.5
FDPF14N30
3.56
--
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2007 Fairchild Semiconductor Corporation
FDP14N30 / FDPF14N30 Rev. A
1
www.fairchildsemi.com

FDPF14N30 Datasheet
Package Marking and Ordering Information
Device Marking
FDP14N30
FDPF14N30
Device
FDP14N30
FDPF14N30
Package
TO-220
TO-220F
Reel Size
-
-
Tape Width
-
-
Quantity
50
50
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min.
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0V, ID = 250μA
ID = 250μA, Referenced to 25°C
VDS = 300V, VGS = 0V
VDS = 240V, TC = 125°C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
300
--
--
--
--
--
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250μA
VGS = 10V, ID = 7A
3.0
--
gFS Forward Transconductance
Dynamic Characteristics
VDS = 40V, ID = 7A
(Note 4)
--
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
--
--
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 150V, ID = 14A
RG = 25Ω
VDS = 240V, ID = 14A
VGS = 10V
(Note 4, 5)
(Note 4, 5)
--
--
--
--
--
--
--
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 14A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, IS = 14A
dIF/dt =100A/μs
(Note 4)
--
--
--
--
--
Typ.
--
0.3
--
--
--
--
--
0.24
10.5
815
150
17
20
105
30
75
18
4.5
8
--
--
--
235
1.6
Max Units
--
--
1
10
100
-100
V
V/°C
μA
μA
nA
nA
5.0 V
0.29 Ω
-- S
1060
195
25
pF
pF
pF
50 ns
120 ns
70 ns
160 ns
25 nC
-- nC
-- nC
14 A
56 A
1.4 V
-- ns
-- μC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 2.8mH, IAS = 14A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD 14A, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width 300μs, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDP14N30 / FDPF14N30 Rev. A
2
www.fairchildsemi.com


Features Datasheet pdf www.DataSheet4U.com FDP14N30 / FDPF14N3 0 300V N-Channel MOSFET FDP14N30 / FDP F14N30 300V N-Channel MOSFET Features 14A, 300V, RDS(on) = 0.29Ω @VGS = 1 0 V • Low gate charge ( typical 18 nC ) • Low Crss ( typical 17 pF) • Fas t switching • 100% avalanche tested Improved dv/dt capability UniFET De scription February 2007 TM These N-C hannel enhancement mode power field eff ect transistors are produced using Fair child’s proprietary, planar stripe, D MOS technology. This advanced technolog y has been especially tailored to minim ize on-state resistance, provide superi or switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are we ll suited for high efficient switched m ode power supplies and active power fac tor correction. D G G DS TO-220 FDP Series GD S TO-220F FDPF Series S A bsolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single.
Keywords FDPF14N30, datasheet, pdf, Fairchild Semiconductor, N-Channel, MOSFET, DPF14N30, PF14N30, F14N30, FDPF14N3, FDPF14N, FDPF14, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)