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FDPF14N30 Dataheets PDF



Part Number FDPF14N30
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDPF14N30 DatasheetFDPF14N30 Datasheet (PDF)

FDPF14N30 — N-Channel UniFETTM MOSFET FDPF14N30 N-Channel UniFETTM MOSFET 300 V, 14 A, 290 mΩ Features • RDS(on) = 290 mΩ (Max.) @ VGS = 10 V, ID = 7 A • Low Gate Charge (Typ. 18 nC) • Low Crss (Typ. 17 pF) • 100% Avalanche Tested • Improved dv/dt Capability Applications • PDP TV • Uninterruptible Power Supply November 2013 Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state r.

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FDPF14N30 — N-Channel UniFETTM MOSFET FDPF14N30 N-Channel UniFETTM MOSFET 300 V, 14 A, 290 mΩ Features • RDS(on) = 290 mΩ (Max.) @ VGS = 10 V, ID = 7 A • Low Gate Charge (Typ. 18 nC) • Low Crss (Typ. 17 pF) • 100% Avalanche Tested • Improved dv/dt Capability Applications • PDP TV • Uninterruptible Power Supply November 2013 Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. D GDS G TO-220F S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) PD Power Dissipation (TC = 25°C) - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature. FDPF14N30 300 14 * 8.4 * 56 * ±30 330 14 14 4.5 35 0.28 -55 to +150 300 Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Junction-to-Ambient, Max. FDPF14N30 3.56 62.5 Unit V A A A V mJ A mJ V/ns W W/°C °C °C Unit °C/W ©2007 Fairchild Semiconductor Corporation 1 FDPF14N30 Rev. C1 www.fairchildsemi.com FDPF14N30 — N-Channel UniFETTM MOSFET Package Marking and Ordering Information Part Number FDPF14N30 Top Mark FDPF14N30 Package TO-220F Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units Electrical Characteristics TC = 25°C unless otherwise noted. Symbol Parameter Conditions Off Characteristics BVDSS ΔBVDSS / ΔTJ IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward IGSSR Gate-Body Leakage Current, Reverse On Characteristics VGS = 0 V, ID = 250 μA ID = 250 μA, Referenced to 25°C VDS = 300 V, VGS = 0 V VDS = 240 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V VGS(th) RDS(on) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 μA VGS = 10 V, ID = 7 A gFS Forward Transconductance Dynamic Characteristics VDS = 40 V, ID = 7 A Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics VDS = 25 V, VGS = 0 V, f = 1.0 MHz td(on) tr Turn-On Delay Time Turn-On Rise Time VDD = 150 V, ID = 14 A, VGS = 10 V, RG = 25 Ω td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge VDS = 240 V, ID = 14 A, VGS = 10 V Qgd Gate-Drain Charge Drain-Source Diode Characteristics and Maximum Ratings (Note 4) (Note 4) IS Maximum Continuous Drain-Source Diode Forward Current ISM Maximum Pulsed Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 14 A trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 14 A, dIF/dt =100 A/μs Min. 300 ------ 3.0 --- ---- -------- ------ Typ. -0.3 ----- -0.24 10.5 815 150 17 20 105 30 75 18 4.5 8 ---235 1.6 Max. Unit -- -- 1 10 100 -100 V V/°C μA μA nA nA 5.0 V 0.29 Ω -- S 1060 pF 195 pF 25 pF 50 ns 120 ns 70 ns 160 ns 25 nC -- nC -- nC 14 A 56 A 1.4 V -- ns -- μC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 2.8 mH, IAS = 14 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 14 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2007 Fairchild Semiconductor Corporation 2 FDPF14N30 Rev. C1 www.fairchildsemi.com FDPF14N30 — N-Channel UniFETTM MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 102 Top : VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 101 6.0 V Bottom : 5.5 V ID, Drain Current [A] 100 10-1 10-1 * Notes : 1. 250μs Pulse Test 2. TC = 25oC 100 101 VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage DS(ON) R [Ω], Drain-Source On-Resistance 1.3 1.2 1.1 1.0 0.9 VGS = 10V 0.8 0.7 0.6 0.5 VGS = 20V 0.4 0.3 0.2 * Note : TJ = 25oC 0.1 0 5 10 15 20 25 30 35 40 45 ID, Drain Current [A] Figure 5. Capacitance Characteristics 2000 1000 Coss Ciss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd * Note : Crss 1. VGS = 0 V 2. f .


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