J112

N-Channel Switch J111, J112, J113, MMBFJ111, MMBFJ112, MMBFJ113 Features This Device is Designed for Low Level Analog Switching, Sample and Hold Circuits and Chopper Stabilized Amplifiers Sourced from Process 51 Source & Drain are Interchangeable These are Pb−Free Devices ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) (Note 1, 2) Symbol Parameter Value Unit VDG VGS IGF TJ, TSTG Drain−Gate Voltage Gate−Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range 35 V −35 V 50 mA −55 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady−state limits. ON Semiconductor should be consulted on applications involving pulsed or low−duty−cycle operations. THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Max Symbol PD Parameter MMBFJ111 / J111 / J112 / MMBFJ112 / J113 MMBFJ113 (Note 3) (Note 4) Unit Total Device Dissipation 625 350 mW Derate Above 25_C 5.0 2.8 mW/°C RqJC Thermal Resistance, 125 Junction−to−Case − °C/W RqJA Thermal Resistance, 200 Junction−to−Ambient 357 °C/W 3. PCB size: FR−4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. 4. Device mounted on FR−4 PCB 36 mm x 18 mm x ...