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J309 Dataheets PDF



Part Number J309
Manufacturers Motorola
Logo Motorola
Description (J308 / J309) JFET VHF/UHF AMPLIFIERS
Datasheet J309 DatasheetJ309 Datasheet (PDF)

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by J308/D JFET VHF/UHF Amplifiers J308 1 DRAIN N–Channel — Depletion 3 GATE J309 J310 Motorola Preferred Devices 2 SOURCE MAXIMUM RATINGS Rating Drain – Source Voltage Gate–Source Voltage Forward Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Junction Temperature Range Storage Temperature Range Symbol VDS VGS IGF PD TJ Tstg Value 25 25 10 350 2.8 – 65 to +125 – 65 to +150 Unit Vdc Vdc mAdc.

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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by J308/D JFET VHF/UHF Amplifiers J308 1 DRAIN N–Channel — Depletion 3 GATE J309 J310 Motorola Preferred Devices 2 SOURCE MAXIMUM RATINGS Rating Drain – Source Voltage Gate–Source Voltage Forward Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Junction Temperature Range Storage Temperature Range Symbol VDS VGS IGF PD TJ Tstg Value 25 25 10 350 2.8 – 65 to +125 – 65 to +150 Unit Vdc Vdc mAdc mW mW/°C °C °C CASE 29–04, STYLE 5 TO–92 (TO–226AA) 1 2 3 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Gate – Source Breakdown Voltage (IG = –1.0 µAdc, VDS = 0) Gate Reverse Current (VGS = –15 Vdc, VDS = 0, TA = 25°C) (VGS = –15 Vdc, VDS = 0, TA = +125°C) Gate Source Cutoff Voltage (VDS = 10 Vdc, ID = 1.0 nAdc) J308 J309 J310 V(BR)GSS IGSS — — VGS(off) – 1.0 – 1.0 – 2.0 — — — – 6.5 – 4.0 – 6.5 — — –1.0 –1.0 nAdc µAdc Vdc – 25 — — Vdc ON CHARACTERISTICS Zero – Gate –Voltage Drain Current(1) (VDS = 10 Vdc, VGS = 0) IDSS J308 J309 J310 VGS(f) 12 12 24 — — — — — 60 30 60 1.0 Vdc mAdc Gate–Source Forward Voltage (VDS = 0, IG = 1.0 mAdc) SMALL– SIGNAL CHARACTERISTICS Common–Source Input Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) Re(yis) J308 J309 J310 Re(yos) Gpg — — — — — 0.7 0.7 0.5 0.25 16 — — — — — mmhos dB mmhos Common–Source Output Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) Common–Gate Power Gain (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) 1. Pulse Test: Pulse Width v 300 µs, Duty Cycle v 3.0%. Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1997 1 J308 J309 J310 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit SMALL– SIGNAL CHARACTERISTICS (continued) Common–Source Forward Transconductance (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) Common–Gate Input Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) Common–Source Forward Transconductance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) J308 J309 J310 gos gfg J308 J309 J310 gog J308 J309 J310 Cgd Cgs — — — — — 150 100 150 1.8 4.3 — — — 2.5 5.0 pF pF — — — 13000 13000 12000 — — — µmhos Re(yfs) Re(yig) gfs 8000 10000 8000 — — — — — 20000 20000 18000 250 µmhos µmhos — — 12 12 — — mmhos mmhos µmhos Common–Source Output Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) Common–Gate Forward Transconductance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) Common–Gate Output Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) Gate–Drain Capacitance (VDS = 0, VGS = –10 Vdc, f = 1.0 MHz) Gate–Source Capacitance (VDS = 0, VGS = –10 Vdc, f = 1.0 MHz) FUNCTIONAL CHARACTERISTICS Noise Figure (VDS = 10 Vdc, ID = 10 mAdc, f = 450 MHz) Equivalent Short–Circuit Input Noise Voltage (VDS = 10 Vdc, ID = 10 mAdc, f = 100 Hz) NF en — — 1.5 10 — — dB nVń Ǹ Hz 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data J308 J309 J310 50 Ω SOURCE U310 C3 L1 C5 C7 1.0 k +VDD C1 = C2 = 0.8 – 10 pF, JFD #MVM010W. C3 = C4 = 8.35 pF Erie #539–002D. C5 = C6 = 5000 pF Erie (2443–000). C7 = 1000 pF, Allen Bradley #FA5C. RFC = 0.33 µH Miller #9230–30. L1 = One Turn #16 Cu, 1/4″ I.D. (Air Core). L2P = One Turn #16 Cu, 1/4″ I.D. (Air Core). L2S = One Turn #16 Cu, 1/4″ I.D. (Air Core). RFC C1 C2 C4 C6 L2P L2S 50 Ω LOAD Figure 1. 450 MHz Common–Gate Amplifier Test Circuit IDSS, SATURATION DRAIN CURRENT (mA) 70 60 I D , DRAIN CURRENT (mA) VDS = 10 V 50 40 30 20 10 –5.0 IDSS + 25°C TA = – 55°C + 25°C 70 60 50 40 +150°C + 25°C – 55°C 30 20 Yfs , FORWARD TRANSCONDUCTANCE (mmhos) 35 30 25 20 15 10 +150°C – 55°C +150°C + 25°C VDS = 10 V f = 1.0 MHz TA = – 55°C + 25°C +150°C 10 0 0 5.0 0 5.0 4.0 3.0 2.0 1.0 0 –1.0 –4.0 –3.0 –2.0 ID – VGS, GATE–SOURCE VOLTAGE (VOLTS) IDSS – VGS, GATE–SOURCE CUTOFF VOLTAGE (VOLTS) VGS, GATE–SOURCE VOLTAGE (VOLTS) Figure 2. Drain Current and Transfer Characteristics versus Gate–Source Voltage Figure 3. Forward Transconductance versus Gate–Source Voltage Yfs , FORWARD TRANSCONDUCTANCE (µmhos) 100 k Yfs 1.0 k Yos, OUTPUT ADMITTANCE (µ mhos) 10 RDS CAPACITANCE (pF) 7.0 120 R DS , ON RESISTANCE (OHMS) Yfs 10 k 96 100 72 Cgs 4.0 48 1.0 k Yos VGS(off) = – 2.3 V = VGS(off) = – 5.7 V = 10 Cgd 1.0 0 10 24 100 0.01 1.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 ID, DRAIN CURRENT (mA) 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 VGS, GATE SOURCE VOLTAGE (VOLTS) Figure 4. Common–Source Output Admittance and Forward Transconductance versus Drain Current Figure 5. On Resistance and Junction Capacitance versus Gate–Source Voltage Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 J308 J309 J310 30 VDS = 10 V ID = 10 mA TA = 25°C 3.0 |S21|, |S11| 0.85 0.45 S22 2.4 Y12 (mmhos) Y11 0.79 0.39 S21 1.8 0.73 0.33 VDS = 10 V ID = 10 mA TA = 25°C S11 0.6 Y12 0 100 200 300 500 f, FREQUENCY (MHz) 700 1000 0.55 0.15 100 0.61 0.21 S12 200 300 50.


J308 J309 J310


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