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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by J308/D
JFET VHF/UHF Amplifiers
J308
1 DRAIN
N–Channel — Depletion
3 GATE
J309 J310
Motorola Preferred Devices
2 SOURCE
MAXIMUM RATINGS
Rating Drain – Source Voltage Gate–Source Voltage Forward Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Junction Temperature Range Storage Temperature Range Symbol VDS VGS IGF PD TJ Tstg Value 25 25 10 350 2.8 – 65 to +125 – 65 to +150 Unit Vdc Vdc mAdc mW mW/°C °C °C CASE 29–04, STYLE 5 TO–92 (TO–226AA)
1 2 3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Gate – Source Breakdown Voltage (IG = –1.0 µAdc, VDS = 0) Gate Reverse Current (VGS = –15 Vdc, VDS = 0, TA = 25°C) (VGS = –15 Vdc, VDS = 0, TA = +125°C) Gate Source Cutoff Voltage (VDS = 10 Vdc, ID = 1.0 nAdc) J308 J309 J310 V(BR)GSS IGSS — — VGS(off) – 1.0 – 1.0 – 2.0 — — — – 6.5 – 4.0 – 6.5 — — –1.0 –1.0 nAdc µAdc Vdc – 25 — — Vdc
ON CHARACTERISTICS
Zero – Gate –Voltage Drain Current(1) (VDS = 10 Vdc, VGS = 0) IDSS J308 J309 J310 VGS(f) 12 12 24 — — — — — 60 30 60 1.0 Vdc mAdc
Gate–Source Forward Voltage (VDS = 0, IG = 1.0 mAdc)
SMALL– SIGNAL CHARACTERISTICS
Common–Source Input Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) Re(yis) J308 J309 J310 Re(yos) Gpg — — — — — 0.7 0.7 0.5 0.25 16 — — — — — mmhos dB mmhos
Common–Source Output Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) Common–Gate Power Gain (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) 1. Pulse Test: Pulse Width
v 300 µs, Duty Cycle v 3.0%.
Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1997
1
J308 J309 J310
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
SMALL– SIGNAL CHARACTERISTICS (continued)
Common–Source Forward Transconductance (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) Common–Gate Input Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) Common–Source Forward Transconductance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) J308 J309 J310 gos gfg J308 J309 J310 gog J308 J309 J310 Cgd Cgs — — — — — 150 100 150 1.8 4.3 — — — 2.5 5.0 pF pF — — — 13000 13000 12000 — — — µmhos Re(yfs) Re(yig) gfs 8000 10000 8000 — — — — — 20000 20000 18000 250 µmhos µmhos — — 12 12 — — mmhos mmhos µmhos
Common–Source Output Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) Common–Gate Forward Transconductance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
Common–Gate Output Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
Gate–Drain Capacitance (VDS = 0, VGS = –10 Vdc, f = 1.0 MHz) Gate–Source Capacitance (VDS = 0, VGS = –10 Vdc, f = 1.0 MHz)
FUNCTIONAL CHARACTERISTICS
Noise Figure (VDS = 10 Vdc, ID = 10 mAdc, f = 450 MHz) Equivalent Short–Circuit Input Noise Voltage (VDS = 10 Vdc, ID = 10 mAdc, f = 100 Hz) NF en — — 1.5 10 — — dB nVń Ǹ Hz
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Motorola Small–Signal Transistors, FETs and Diodes Device Data
J308 J309 J310
50 Ω SOURCE U310 C3 L1 C5 C7 1.0 k +VDD C1 = C2 = 0.8 – 10 pF, JFD #MVM010W. C3 = C4 = 8.35 pF Erie #539–002D. C5 = C6 = 5000 pF Erie (2443–000). C7 = 1000 pF, Allen Bradley #FA5C. RFC = 0.33 µH Miller #9230–30. L1 = One Turn #16 Cu, 1/4″ I.D. (Air Core). L2P = One Turn #16 Cu, 1/4″ I.D. (Air Core). L2S = One Turn #16 Cu, 1/4″ I.D. (Air Core). RFC C1 C2 C4 C6 L2P L2S 50 Ω LOAD
Figure 1. 450 MHz Common–Gate Amplifier Test Circuit
IDSS, SATURATION DRAIN CURRENT (mA)
70 60 I D , DRAIN CURRENT (mA) VDS = 10 V 50 40 30 20 10 –5.0 IDSS + 25°C TA = – 55°C + 25°C
70 60 50 40 +150°C + 25°C – 55°C 30 20
Yfs , FORWARD TRANSCONDUCTANCE (mmhos)
35 30 25 20 15 10 +150°C – 55°C +150°C + 25°C VDS = 10 V f = 1.0 MHz TA = – 55°C
+ 25°C
+150°C 10 0 0
5.0 0 5.0 4.0 3.0 2.0 1.0 0
–1.0 –4.0 –3.0 –2.0 ID – VGS, GATE–SOURCE VOLTAGE (VOLTS) IDSS – VGS, GATE–SOURCE CUTOFF VOLTAGE (VOLTS)
VGS, GATE–SOURCE VOLTAGE (VOLTS)
Figure 2. Drain Current and Transfer Characteristics versus Gate–Source Voltage
Figure 3. Forward Transconductance versus Gate–Source Voltage
Yfs , FORWARD TRANSCONDUCTANCE (µmhos)
100 k Yfs
1.0 k Yos, OUTPUT ADMITTANCE (µ mhos)
10 RDS CAPACITANCE (pF) 7.0
120 R DS , ON RESISTANCE (OHMS)
Yfs 10 k
96
100
72 Cgs 4.0 48
1.0 k Yos
VGS(off) = – 2.3 V = VGS(off) = – 5.7 V =
10
Cgd 1.0 0 10
24
100 0.01
1.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 ID, DRAIN CURRENT (mA)
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0 0
VGS, GATE SOURCE VOLTAGE (VOLTS)
Figure 4. Common–Source Output Admittance and Forward Transconductance versus Drain Current
Figure 5. On Resistance and Junction Capacitance versus Gate–Source Voltage
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
J308 J309 J310
30 VDS = 10 V ID = 10 mA TA = 25°C 3.0 |S21|, |S11| 0.85 0.45 S22 2.4 Y12 (mmhos) Y11 0.79 0.39 S21 1.8 0.73 0.33 VDS = 10 V ID = 10 mA TA = 25°C S11 0.6 Y12 0 100 200 300 500 f, FREQUENCY (MHz) 700 1000 0.55 0.15 100 0.61 0.21 S12 200 300 50.