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MAC16CN Dataheets PDF



Part Number MAC16CN
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Triacs Silicon Bidirectional Thyristors
Datasheet MAC16CN DatasheetMAC16CN Datasheet (PDF)

www.DataSheet4U.com MAC16CM, MAC16CN Preferred Device Triacs Silicon Bidirectional Thyristors Designed primarily for full wave ac control applications, such as motor controls, heating controls or dimmers; or wherever full−wave, silicon gate−controlled devices are needed. Features http://onsemi.com • • • • • • • • • High Commutating di/dt and High Immunity to dV/dt @ 125°C Minimizes Snubber Networks for Protection Blocking Voltage to 800 Volts On-State Current Rating of 16 Amperes RMS High S.

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www.DataSheet4U.com MAC16CM, MAC16CN Preferred Device Triacs Silicon Bidirectional Thyristors Designed primarily for full wave ac control applications, such as motor controls, heating controls or dimmers; or wherever full−wave, silicon gate−controlled devices are needed. Features http://onsemi.com • • • • • • • • • High Commutating di/dt and High Immunity to dV/dt @ 125°C Minimizes Snubber Networks for Protection Blocking Voltage to 800 Volts On-State Current Rating of 16 Amperes RMS High Surge Current Capability − 150 Amperes Industry Standard TO-220AB Package for Ease of Design Glass Passivated Junctions for Reliability and Uniformity Operational in Three Quadrants, Q1, Q2, and Q3 Pb−Free Packages are Available* TRIACS 16 AMPERES RMS 400 thru 800 VOLTS MT2 G MT1 MARKING DIAGRAM MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off-State Voltage (Note 1) (TJ = − 40 to 125°C) MAC16CM MAC16CN On-State RMS Current (Full Cycle Sine Wave 50 to 60 Hz; TC = 80°C) Peak Non-Repetitive Surge Current (One Full Cycle, 60 Hz, TJ = 125°C) Circuit Fusing Consideration (t = 8.33 ms) Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 80°C) Average Gate Power (t = 8.3 ms, TC = 80°C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM IT(RMS) 600 800 16 A 1 2 3 x A Y WW G Value Unit V TO−220AB CASE 221A−09 STYLE 4 = M or N = Assembly Location = Year = Work Week = Pb−Free Package MAC16CxG AYWW ITSM I2t PGM PG(AV) TJ Tstg 150 93 20 0.5 −40 to +125 −40 to +150 A A2sec W W 1 °C °C 2 3 4 PIN ASSIGNMENT Main Terminal 1 Main Terminal 2 Gate Main Terminal 2 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. ORDERING INFORMATION Device MAC16CM MAC16CMG MAC16CN MAC16CNG Package TO−220AB TO−220AB (Pb−Free) TO−220AB TO−220AB (Pb−Free) Shipping 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 Preferred devices are recommended choices for future use and best overall value. 1 December, 2005 − Rev. 3 Publication Order Number: MAC16C/D MAC16CM, MAC16CN THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Junction−to−Ambient Symbol RqJC RqJA TL Value 2.2 62.5 260 Unit °C/W °C Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM Gate Open) ON CHARACTERISTICS Peak On-State Voltage (Note 2) (ITM = $21 A Peak) Gate Trigger Current (Continuous DC) (VD = 12 V, RL = 100 W) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) Holding Current (VD = 12 V, Gate Open, Initiating Current = $150 mA) Latching Current (VD = 12 V, IG = 35 mA) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) Gate Trigger Voltage (Continuous DC) (VD = 12 V, RL = 100 W) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current (VD = 400 V, ITM = 6.0 A, Commutating dV/dt = 24 V/ms, Gate Open, TJ = 125°C, f = 250 Hz, CL = 10 mF, LL = 40 mH, with Snubber) Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C) Repetitive Critical Rate of Rise of On-State Current IPK = 50 A; PW = 40 msec; diG/dt = 200 mA/msec; f = 60 Hz 2. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. (di/dt)c 15 − − A/ms VTM − IGT 8.0 8.0 8.0 IH − IL − − − VGT 0.5 0.5 0.5 0.75 0.72 0.82 1.5 1.5 1.5 25 40 24 50 80 50 V 20 50 mA 12 16 20 35 35 35 mA 1.2 1.6 mA V TJ = 25°C TJ = 125°C IDRM, IRRM mA − − − − 0.01 2.0 Symbol Min Typ Max Unit dV/dt 600 − − V/ms di/dt − − 10 A/ms http://onsemi.com 2 MAC16CM, MAC16CN Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Quadrant 1 MainTerminal 2 + Symbol VDRM IDRM VRRM IRRM VTM IH Parameter Peak Repetitive Forward Off State Voltage Peak Forward Blocking Current Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current Maximum On State Voltage Holding Current Quadrant 3 MainTerminal 2 − IH VTM IRRM at VRRM on state IH VTM off state + Voltage IDRM at VDRM Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 (+) MT2 Quadrant II (−) IGT GATE MT1 REF (+) IGT GATE MT1 REF Quadrant I IGT − (−) MT2 (−) MT2 + IGT Quad.


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