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MAC210A10

ON Semiconductor

Triacs Silicon Bidirectional Thyristors

www.DataSheet4U.com MAC210A8, MAC210A10 Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave AC con...


ON Semiconductor

MAC210A10

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www.DataSheet4U.com MAC210A8, MAC210A10 Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full−wave silicon gate controlled solid−state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied main terminal voltage with positive or negative gate triggering. Features http://onsemi.com Blocking Voltage to 600 Volts All Diffused and Glass Passivated Junctions for Greater Parameter Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability Gate Triggering Guaranteed in Four Modes (Quadrants) Pb−Free Packages are Available* Uniformity and Stability TRIACS 10 AMPERES RMS 600 thru 800 VOLTS MT2 G MT1 MARKING DIAGRAM MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to +125°C, Sine Wave 50 to 60 Hz, Gate Open) MAC210A8 MAC210A10 On−State RMS Current (TC = +70°C) Full Cycle Sine Wave 50 to 60 Hz Peak Non−Repetitive Surge Current (One Full Cycle, Sine Wave 60 Hz, TC = +25°C) Preceded and followed by rated current Circuit Fusing Considerations, (t = 8.3 ms) Peak Gate Power (TC = +70°C, Pulse Width = 10 ms) Average Gate Power (TC = +70°C, t = 8.3 ms) Peak Gate Current (TC = +70°C, Pulse Width = 10 ms) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM...




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