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MAC8D, MAC8M, MAC8N
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required.
http://onsemi.com Features
• • • • • • • •
Blocking Voltage to 800 Volts On-State Current Rating of 8.0 Amperes RMS at 100°C Uniform Gate Trigger Currents in Three Quadrants High Immunity to dv/dt − 250 V/ms minimum at 125°C Minimizes Snubber Networks for Protection Industry Standard TO-220AB Package High Commutating di/dt − 6.5 A/ms minimum at 125°C Pb−Free Packages are Available*
TRIACS 8 AMPERES RMS 400 thru 800 VOLTS
MT2 G
MT1
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Characteristic Peak Repetitive Off−State Voltage, (Note 1) (TJ = −40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MAC8D MAC8M MAC8N On-State RMS Current, (Full Cycle Sine Wave, 60 Hz, TC = 100°C) Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TJ = 125°C) Circuit Fusing Consideration (t = 8.3 ms) Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 80°C) Average Gate Power (t = 8.3 ms, TC = 80°C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 400 600 800 IT(RMS) ITSM 8.0 80 A 1 A 2 3 TO−220AB CASE 221A−09 STYLE 4 Value Unit V
MARKING DIAGRAM
MAC18xG AYWW
I2t PGM PG(AV) TJ Tstg
26 16 0.35 −40 to +125 −40 to +150
A2s W W °C °C
x A Y WW G
= D, M, or N = Assembly Location = Year = Work Week = Pb−Free Package
ORDERING INFORMATION
Device MAC8D MAC8DG MAC8M MAC8MG MAC8N MAC8NG Package TO−220AB TO−220AB (Pb−Free) TO−220AB TO−220AB (Pb−Free) TO−220AB TO−220AB (Pb−Free) Shipping 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
Preferred devices are recommended choices for future use and best overall value.
1
December, 2005 − Rev. 5
Publication Order Number: MAC8D/D
MAC8D, MAC8M, MAC8N
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds Symbol RqJC RqJA TL Value 2.2 62.5 260 Unit °C/W °C/W °C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C TJ = 125°C ON CHARACTERISTICS Peak On-State Voltage (Note 2), (ITM = ± 11 A Peak) Gate Trigger Current (Continuous DC) (VD = 12 V, RL = 100 W) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) Holding Current, (VD = 12 V, Gate Open, Initiating Current = ±150 mA) Latching Current (VD = 24 V, IG = 35 mA), MT2(+), G(+); MT2(−), G(−) MT2(+), G(−) Gate Trigger Voltage (VD = 12 V, RL = 100 W) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) Gate Non−Trigger Voltage (VD = 12 V, RL = 100 W, TJ = 125°C) MT2(+), G(+); MT2(+), G(−); MT2(−), G(−) DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current See Figure 10.(VD = 400 V, ITM = 4.4 A, Commutating dv/dt = 18 V/ms,Gate Open, TJ = 125°C, f = 250 Hz, No Snubber) CL = 10 mF LL = 40 mH Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C) 2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. (di/dt)c 6.5 − − A/ms VTM IGT 5.0 5.0 5.0 IH IL VGT 0.5 0.5 0.5 VGD 0.2 − − 0.69 0.77 0.72 1.5 1.5 1.5 V − − − 13 16 18 20 20 30 35 35 35 40 50 80 mA mA V − 1.2 1.6 V mA IDRM, IRRM − − − − 0.01 2.0 mA Symbol Min Typ Max Unit
dv/dt
250
−
−
V/ms
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2
MAC8D, MAC8M, MAC8N
Voltage Current Characteristic of Triacs (Bidirectional Device)
+ Current Quadrant 1 MainTerminal 2 +
Symbol
VDRM IDRM VRRM IRRM VTM IH
Parameter
Peak Repetitive Forward Off State Voltage Peak Forward Blocking Current Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current Maximum On State Voltage Holding Current Quadrant 3 MainTerminal 2 − IH VTM IRRM at VRRM on state IH
VTM
off state
+ Voltage IDRM at VDRM
Quadrant Definitions for a Triac
MT2 POSITIVE (Positive Half Cycle) +
(+) MT2
(+) MT2
Quadrant II
(−) IGT GATE MT1 REF
(+) IGT GATE MT1 REF
Quadrant I
IGT − (−) MT2 (−) MT2
+ IGT
Quadrant III
(−) IGT GATE MT1 REF
(+) IGT GATE MT1 R.