DatasheetsPDF.com

MAC8D Dataheets PDF



Part Number MAC8D
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description (MAC8x) Triacs Silicon Bidirectional Thyristors
Datasheet MAC8D DatasheetMAC8D Datasheet (PDF)

www.DataSheet4U.com MAC8D, MAC8M, MAC8N Preferred Device Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. http://onsemi.com Features • • • • • • • • Blocking Voltage to 800 Volts On-State Current Rating of 8.0 Amperes RMS at 100°C Uniform Gate Trigger Currents in Three Quadrants High Immunity to dv/dt − 250 V/ms minimum at 125°C Minimizes Snubber Networks for Protection I.

  MAC8D   MAC8D


Document
www.DataSheet4U.com MAC8D, MAC8M, MAC8N Preferred Device Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. http://onsemi.com Features • • • • • • • • Blocking Voltage to 800 Volts On-State Current Rating of 8.0 Amperes RMS at 100°C Uniform Gate Trigger Currents in Three Quadrants High Immunity to dv/dt − 250 V/ms minimum at 125°C Minimizes Snubber Networks for Protection Industry Standard TO-220AB Package High Commutating di/dt − 6.5 A/ms minimum at 125°C Pb−Free Packages are Available* TRIACS 8 AMPERES RMS 400 thru 800 VOLTS MT2 G MT1 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Characteristic Peak Repetitive Off−State Voltage, (Note 1) (TJ = −40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MAC8D MAC8M MAC8N On-State RMS Current, (Full Cycle Sine Wave, 60 Hz, TC = 100°C) Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TJ = 125°C) Circuit Fusing Consideration (t = 8.3 ms) Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 80°C) Average Gate Power (t = 8.3 ms, TC = 80°C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 400 600 800 IT(RMS) ITSM 8.0 80 A 1 A 2 3 TO−220AB CASE 221A−09 STYLE 4 Value Unit V MARKING DIAGRAM MAC18xG AYWW I2t PGM PG(AV) TJ Tstg 26 16 0.35 −40 to +125 −40 to +150 A2s W W °C °C x A Y WW G = D, M, or N = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device MAC8D MAC8DG MAC8M MAC8MG MAC8N MAC8NG Package TO−220AB TO−220AB (Pb−Free) TO−220AB TO−220AB (Pb−Free) TO−220AB TO−220AB (Pb−Free) Shipping 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 Preferred devices are recommended choices for future use and best overall value. 1 December, 2005 − Rev. 5 Publication Order Number: MAC8D/D MAC8D, MAC8M, MAC8N THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds Symbol RqJC RqJA TL Value 2.2 62.5 260 Unit °C/W °C/W °C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C TJ = 125°C ON CHARACTERISTICS Peak On-State Voltage (Note 2), (ITM = ± 11 A Peak) Gate Trigger Current (Continuous DC) (VD = 12 V, RL = 100 W) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) Holding Current, (VD = 12 V, Gate Open, Initiating Current = ±150 mA) Latching Current (VD = 24 V, IG = 35 mA), MT2(+), G(+); MT2(−), G(−) MT2(+), G(−) Gate Trigger Voltage (VD = 12 V, RL = 100 W) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) Gate Non−Trigger Voltage (VD = 12 V, RL = 100 W, TJ = 125°C) MT2(+), G(+); MT2(+), G(−); MT2(−), G(−) DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current See Figure 10.(VD = 400 V, ITM = 4.4 A, Commutating dv/dt = 18 V/ms,Gate Open, TJ = 125°C, f = 250 Hz, No Snubber) CL = 10 mF LL = 40 mH Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C) 2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. (di/dt)c 6.5 − − A/ms VTM IGT 5.0 5.0 5.0 IH IL VGT 0.5 0.5 0.5 VGD 0.2 − − 0.69 0.77 0.72 1.5 1.5 1.5 V − − − 13 16 18 20 20 30 35 35 35 40 50 80 mA mA V − 1.2 1.6 V mA IDRM, IRRM − − − − 0.01 2.0 mA Symbol Min Typ Max Unit dv/dt 250 − − V/ms http://onsemi.com 2 MAC8D, MAC8M, MAC8N Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Quadrant 1 MainTerminal 2 + Symbol VDRM IDRM VRRM IRRM VTM IH Parameter Peak Repetitive Forward Off State Voltage Peak Forward Blocking Current Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current Maximum On State Voltage Holding Current Quadrant 3 MainTerminal 2 − IH VTM IRRM at VRRM on state IH VTM off state + Voltage IDRM at VDRM Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 (+) MT2 Quadrant II (−) IGT GATE MT1 REF (+) IGT GATE MT1 REF Quadrant I IGT − (−) MT2 (−) MT2 + IGT Quadrant III (−) IGT GATE MT1 REF (+) IGT GATE MT1 R.


MAC4DSN MAC8D MAC8M


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)