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MAC9D Dataheets PDF



Part Number MAC9D
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description (MAC9x) Triacs Silicon Bidirectional Thyristors
Datasheet MAC9D DatasheetMAC9D Datasheet (PDF)

www.DataSheet4U.com MAC9D, MAC9M, MAC9N Preferred Device Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. http://onsemi.com Features • • • • • • • • Blocking Voltage to 800 Volts On-State Current Rating of 8.0 Amperes RMS at 100°C Uniform Gate Trigger Currents in Three Quadrants High Immunity to dv/dt − 500 V/ms minimum at 125°C Minimizes Snubber Networks for Protection I.

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www.DataSheet4U.com MAC9D, MAC9M, MAC9N Preferred Device Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. http://onsemi.com Features • • • • • • • • Blocking Voltage to 800 Volts On-State Current Rating of 8.0 Amperes RMS at 100°C Uniform Gate Trigger Currents in Three Quadrants High Immunity to dv/dt − 500 V/ms minimum at 125°C Minimizes Snubber Networks for Protection Industry Standard TO-220AB Package High Commutating di/dt − 6.5 A/ms minimum at 125°C Pb−Free Packages are Available* TRIACS 8 AMPERES RMS 400 thru 800 VOLTS MT2 G MT1 MARKING DIAGRAM MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MAC9D MAC9M MAC9N On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 100°C) Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TJ = 125°C) Circuit Fusing Consideration (t = 8.3 ms) Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 80°C) Average Gate Power (t = 8.3 ms, TC = 80°C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 400 600 800 IT(RMS) ITSM 8.0 80 A A Value Unit V MAC9xG AYWW 1 2 TO−220AB CASE 221A−09 STYLE 4 x A Y WW G = D, M, or N = Assembly Location = Year = Work Week = Pb−Free Package 3 I2t PGM PG(AV) TJ Tstg 26 16 0.35 −40 to +125 −40 to +150 A2sec W 1 W °C °C 2 3 4 PIN ASSIGNMENT Main Terminal 1 Main Terminal 2 Gate Main Terminal 2 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. ORDERING INFORMATION Device MAC9D MAC9DG MAC9M MAC9MG MAC9N MAC9NG Package TO−220AB TO−220AB (Pb−Free) TO−220AB TO−220AB (Pb−Free) TO−220AB TO−220AB (Pb−Free) Shipping 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 Preferred devices are recommended choices for future use and best overall value. 1 December, 2005 − Rev. 3 Publication Order Number: MAC9/D MAC9D, MAC9M, MAC9N THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Junction−to−Ambient Symbol RqJC RqJA TL Value 2.2 62.5 260 Unit °C/W °C Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) ON CHARACTERISTICS Peak On-State Voltage (Note 2) (ITM = ± 11 A Peak) Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) Holding Current (VD = 12 V, Gate Open, Initiating Current = ±150 mA) Latching Current (VD = 24 V, IG = 50 mA) MT2(+), G(+); MT2(−), G(−) MT2(+), G(−) Gate Trigger Voltage (VD = 12 V, RL = 100 W) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) Gate Non−Trigger Voltage (VD = 12 V, RL = 100 W, TJ = 125°C) MT2(+), G(+); MT2(+), G(−); MT2(−), G(−) DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current; See Figure 10. (VD = 400 V, ITM = 4.4 A, Commutating dv/dt = 18 V/ms, Gate Open, TJ = 125°C, f = 250 Hz, No Snubber) (di/dt)c CL = 10 mF LL = 40 mH dv/dt 500 − − V/ms 6.5 − A/ms VTM IGT 10 10 10 IH IL − − VGT 0.5 0.5 0.5 VGD 0.2 − − 0.69 0.77 0.72 1.5 1.5 1.5 V 20 30 50 80 V − 16 18 22 30 50 50 50 50 mA mA − 1.2 1.6 V mA TJ = 25°C TJ = 125°C IDRM, IRRM mA − − − − 0.01 2.0 Symbol Min Typ Max Unit Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C) 2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. http://onsemi.com 2 MAC9D, MAC9M, MAC9N Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Quadrant 1 MainTerminal 2 + Symbol VDRM IDRM VRRM IRRM VTM IH Parameter Peak Repetitive Forward Off State Voltage Peak Forward Blocking Current Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current Maximum On State Voltage Holding Current Quadrant 3 MainTerminal 2 − IH VTM IRRM at VRRM on state IH VTM off state + Voltage IDRM at VDRM Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 (+) MT2 Quadrant II (−) IGT GATE MT1 REF (+) IGT GATE MT1 REF Quadrant I IGT − (−) MT2 (−) MT2 + IGT Quadrant III (−) IGT GA.


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