www.DataSheet4U.com
MBD301, MMBD301LT1
Preferred Device
Silicon Hot−Carrier Diodes
SCHOTTKY Barrier Diodes
These devic...
www.DataSheet4U.com
MBD301, MMBD301LT1
Preferred Device
Silicon Hot−Carrier Diodes
SCHOTTKY Barrier Diodes
These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low−cost, high−volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package.
Features
http://onsemi.com
Extremely Low Minority Carrier Lifetime − 15 ps (Typ) Very Low Capacitance − 1.5 pF (Max) @ VR = 15 V Low Reverse Leakage − IR = 13 nAdc (Typ) MBD301, MMBD301 Pb−Free Packages are Available
30 VOLTS SILICON HOT−CARRIER DETECTOR AND SWITCHING DIODES
MBD301
MARKING DIAGRAM
TO−92 (TO−226AC) CASE 182 STYLE 1 MBD 301 AYWWG G
MAXIMUM RATINGS
MBD301 Rating Reverse Voltage Total Device Dissipation @ TA = 25°C Derate above 25°C Operating Junction Temperature Range Storage Temperature Range Symbol VR PF 280 2.8 TJ Tstg 200 2.0 −55 to +125 −55 to +150 mW mW/°C °C °C MMBD301LT1 Value 30 Unit V
1 2
A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
2 CATHO...