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MMBD301LT1 Dataheets PDF



Part Number MMBD301LT1
Manufacturers Motorola
Logo Motorola
Description Silicon Hot-Carrier Diodes SCHOTTKY Barrier Diodes
Datasheet MMBD301LT1 DatasheetMMBD301LT1 Datasheet (PDF)

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBD301/D Silicon Hot-Carrier Diodes Schottky Barrier Diodes These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low–cost, high–volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package..

  MMBD301LT1   MMBD301LT1


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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBD301/D Silicon Hot-Carrier Diodes Schottky Barrier Diodes These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low–cost, high–volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. • Extremely Low Minority Carrier Lifetime – 15 ps (Typ) • Very Low Capacitance – 1.5 pF (Max) @ VR = 15 V • Low Reverse Leakage – IR = 13 nAdc (Typ) MBD301, MMBD301 MBD301 MMBD301LT1 Motorola Preferred Devices 30 VOLTS SILICON HOT–CARRIER DETECTOR AND SWITCHING DIODES 1 2 MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) MBD301 Rating Reverse Voltage Forward Power Dissipation @ TA = 25°C Derate above 25°C Operating Junction Temperature Range Storage Temperature Range Symbol VR PF 280 2.8 TJ – 55 to +125 Tstg – 55 to +150 °C 200 2.0 mW mW/°C °C MMBD301LT1 Value 30 Unit Volts CASE 182– 02, STYLE 1 (TO–226AC) 2 CATHODE 1 ANODE 3 1 2 DEVICE MARKING MMBD301LT1 = 4T CASE 318 – 08, STYLE 8 SOT– 23 (TO – 236AB) 3 CATHODE 1 ANODE ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 µA) Total Capacitance (VR = 15 V, f = 1.0 MHz) Figure 1 Reverse Leakage (VR = 25 V) Figure 3 Forward Voltage (IF = 1.0 mAdc) Figure 4 Forward Voltage (IF = 10 mAdc) Figure 4 Symbol V(BR)R CT IR VF VF Min 30 — — — — Typ — 0.9 13 0.38 0.52 Max — 1.5 200 0.45 0.6 Unit Volts pF nAdc Vdc Vdc NOTE: MMBD301LT1 is also available in bulk packaging. Use MMBD301L as the device title to order this device in bulk. Thermal Clad is a registered trademark of the Berquist Company. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1997 1 MBD301 MMBD301LT1 TYPICAL ELECTRICAL CHARACTERISTICS 2.8 C T, TOTAL CAPACITANCE (pF) 2.4 2.0 1.6 1.2 0.8 0.4 0 0 3.0 6.0 18 9.0 12 15 21 VR, REVERSE VOLTAGE (VOLTS) 24 27 30 500 f = 1.0 MHz t , MINORITY CARRIER LIFETIME (ps) 400 KRAKAUER METHOD 300 200 100 0 0 10 20 30 40 50 60 70 IF, FORWARD CURRENT (mA) 80 90 100 Figure 1. Total Capacitance Figure 2. Minority Carrier Lifetime 10 TA = 100°C 100 IR, REVERSE LEAKAGE (m A) 1.0 IF, FORWARD CURRENT (mA) 10 TA = 85°C TA = – 40°C 0.1 75°C 0.01 25°C 1.0 TA = 25°C 0.001 0.1 0 6.0 12 18 VR, REVERSE VOLTAGE (VOLTS) 24 30 0.2 0.4 0.6 0.8 VF, FORWARD VOLTAGE (VOLTS) 1.0 1.2 Figure 3. Reverse Leakage Figure 4. Forward Voltage IF(PEAK) CAPACITIVE CONDUCTION IR(PEAK) FORWARD CONDUCTION STORAGE CONDUCTION SINUSOIDAL GENERATOR BALLAST NETWORK (PADS) PADS DUT SAMPLING OSCILLOSCOPE (50 W INPUT) Figure 5. Krakauer Method of Measuring Lifetime 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data MBD301 MMBD301LT1 INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT–23 SOT–23 POWER DISSIPATION The power dissipation of the SOT–23 is a function of the drain pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the SOT–23 package, PD can be calculated as follows: PD = TJ(max) – TA RθJA SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient shall be .


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