Document
www.DataSheet4U.com
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MBD301/D
Silicon Hot-Carrier Diodes Schottky Barrier Diodes
These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low–cost, high–volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. • Extremely Low Minority Carrier Lifetime – 15 ps (Typ) • Very Low Capacitance – 1.5 pF (Max) @ VR = 15 V • Low Reverse Leakage – IR = 13 nAdc (Typ) MBD301, MMBD301
MBD301 MMBD301LT1
Motorola Preferred Devices
30 VOLTS SILICON HOT–CARRIER DETECTOR AND SWITCHING DIODES
1 2
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
MBD301 Rating Reverse Voltage Forward Power Dissipation @ TA = 25°C Derate above 25°C Operating Junction Temperature Range Storage Temperature Range Symbol VR PF 280 2.8 TJ – 55 to +125 Tstg – 55 to +150 °C 200 2.0 mW mW/°C °C MMBD301LT1 Value 30 Unit Volts
CASE 182– 02, STYLE 1 (TO–226AC)
2 CATHODE
1 ANODE
3 1 2
DEVICE MARKING
MMBD301LT1 = 4T
CASE 318 – 08, STYLE 8 SOT– 23 (TO – 236AB)
3 CATHODE
1 ANODE
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Reverse Breakdown Voltage (IR = 10 µA) Total Capacitance (VR = 15 V, f = 1.0 MHz) Figure 1 Reverse Leakage (VR = 25 V) Figure 3 Forward Voltage (IF = 1.0 mAdc) Figure 4 Forward Voltage (IF = 10 mAdc) Figure 4 Symbol V(BR)R CT IR VF VF Min 30 — — — — Typ — 0.9 13 0.38 0.52 Max — 1.5 200 0.45 0.6 Unit Volts pF nAdc Vdc Vdc
NOTE: MMBD301LT1 is also available in bulk packaging. Use MMBD301L as the device title to order this device in bulk.
Thermal Clad is a registered trademark of the Berquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1997
1
MBD301 MMBD301LT1
TYPICAL ELECTRICAL CHARACTERISTICS
2.8 C T, TOTAL CAPACITANCE (pF) 2.4 2.0 1.6 1.2 0.8 0.4 0 0 3.0 6.0 18 9.0 12 15 21 VR, REVERSE VOLTAGE (VOLTS) 24 27 30 500 f = 1.0 MHz
t , MINORITY CARRIER LIFETIME (ps)
400 KRAKAUER METHOD 300
200
100
0 0 10 20 30 40 50 60 70 IF, FORWARD CURRENT (mA) 80 90 100
Figure 1. Total Capacitance
Figure 2. Minority Carrier Lifetime
10 TA = 100°C
100
IR, REVERSE LEAKAGE (m A)
1.0
IF, FORWARD CURRENT (mA)
10 TA = 85°C TA = – 40°C
0.1
75°C
0.01
25°C
1.0 TA = 25°C
0.001
0.1 0 6.0 12 18 VR, REVERSE VOLTAGE (VOLTS) 24 30 0.2 0.4 0.6 0.8 VF, FORWARD VOLTAGE (VOLTS) 1.0 1.2
Figure 3. Reverse Leakage
Figure 4. Forward Voltage
IF(PEAK)
CAPACITIVE CONDUCTION
IR(PEAK) FORWARD CONDUCTION STORAGE CONDUCTION
SINUSOIDAL GENERATOR
BALLAST NETWORK (PADS)
PADS DUT
SAMPLING OSCILLOSCOPE (50 W INPUT)
Figure 5. Krakauer Method of Measuring Lifetime
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MBD301 MMBD301LT1
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process.
0.037 0.95
0.037 0.95
0.079 2.0 0.035 0.9 0.031 0.8
inches mm
SOT–23 SOT–23 POWER DISSIPATION
The power dissipation of the SOT–23 is a function of the drain pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the SOT–23 package, PD can be calculated as follows: PD = TJ(max) – TA RθJA
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient shall be .