MMBD701LT1

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBD701/D Silicon Hot-Carrier Diodes Schottky Barrier Diodes These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low–cost, high–volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. Extremely Low Minority Carrier Lifetime – 15 ps (Typ) Very Low Capacitance – 1.0 pF @ VR = 20 V High Reverse Voltage – to 70 Volts Low Reverse Leakage – 200 nA (Max) MBD701 MMBD701LT1 Motorola Preferred Devices 70 VOLTS HIGH–VOLTAGE SILICON HOT– CARRIER DETECTOR AND SWITCHING DIODES 1 2 CASE 182– 02, STYLE 1 (TO–226AC) MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) MBD701 Rating Reverse Voltage Forward Power Dissipation @ TA = 25°C Derate above 25°C Operating Junction Temperature Range Storage Temperature Range Symbol VR PF 280 2.8 TJ – 55 to +125 Tstg – 55 to +150 °C CASE 318 – 08, STYLE 8 SOT– 23 (TO – 236AB) 200 2.0 mW mW/°C °C 1 2 3 MMBD701LT1 Value 70 Unit Volts 2 CATHODE 1 ANODE DEVICE MARKING MMBD701LT1 = 5H 3 CATHODE 1 ANODE ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 µAdc) Total Capacitance (VR = 20 V, f = 1.0 MHz) Figure 1 Reverse Leakage (VR = 35 V) Figure 3 Forward Voltage (IF = 1....