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MBR160

ON Semiconductor

(MBR150 / MBR160) Axial Lead Rectifiers

www.DataSheet4U.com MBR150, MBR160 MBR160 is a Preferred Device Axial Lead Rectifiers The MBR150/160 series employs th...


ON Semiconductor

MBR160

File DownloadDownload MBR160 Datasheet


Description
www.DataSheet4U.com MBR150, MBR160 MBR160 is a Preferred Device Axial Lead Rectifiers The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes. Features http://onsemi.com Low Reverse Current Low Stored Charge, Majority Carrier Conduction Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction These are Pb−Free Devices* SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE − 50 AND 60 VOLTS Mechanical Characteristics: Case: Epoxy, Molded Weight: 0.4 Gram (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Lead Temperature for Soldering Purposes: Leads are Readily Solderable 260°C Max. for 10 Seconds Polarity: Cathode Indicated by Polarity Band DO−41 AXIAL LEAD CASE 59 STYLE 1 Value 50 60 VRWM VR MBR150 MBR160 VR(RMS) IO 35 42 1.0 V A A MBR1x0 YYWW G G Unit V MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage MBR150 MBR160 Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Symbol VRRM MARKING DIAGRAM Average Rectified Forward Current (Note 1) (VR(equiv) v 0.2 VR(dc), TL = 90°C, RqJA = 80°C/W, P.C. Board Mounting, TA = 55°C) Nonrepetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single p...




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