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MBR160 Dataheets PDF



Part Number MBR160
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description (MBR150 / MBR160) Axial Lead Rectifiers
Datasheet MBR160 DatasheetMBR160 Datasheet (PDF)

www.DataSheet4U.com MBR150, MBR160 MBR160 is a Preferred Device Axial Lead Rectifiers The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes. Features http://onsemi.com • • • • • Low Reverse Current Low .

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www.DataSheet4U.com MBR150, MBR160 MBR160 is a Preferred Device Axial Lead Rectifiers The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes. Features http://onsemi.com • • • • • Low Reverse Current Low Stored Charge, Majority Carrier Conduction Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction These are Pb−Free Devices* SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE − 50 AND 60 VOLTS Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 0.4 Gram (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • Lead Temperature for Soldering Purposes: • Leads are Readily Solderable 260°C Max. for 10 Seconds Polarity: Cathode Indicated by Polarity Band DO−41 AXIAL LEAD CASE 59 STYLE 1 Value 50 60 VRWM VR MBR150 MBR160 VR(RMS) IO 35 42 1.0 V A A MBR1x0 YYWW G G Unit V MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage MBR150 MBR160 Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Symbol VRRM MARKING DIAGRAM Average Rectified Forward Current (Note 1) (VR(equiv) v 0.2 VR(dc), TL = 90°C, RqJA = 80°C/W, P.C. Board Mounting, TA = 55°C) Nonrepetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz, TL = 70°C) Operating and Storage Junction Temperature Range (Reverse Voltage Applied) IFSM 25 (for one cycle) − 65 to +150 A TJ, Tstg °C A = Assembly Location MBR1x0 = Device Code x = 5 or 6 Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) THERMAL CHARACTERISTICS (Notes 1 and 2) Characteristic Thermal Resistance, Junction−to−Ambient Symbol RqJA Max 80 Unit °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Lead Temperature reference is cathode lead 1/32″ from case. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 Preferred devices are recommended choices for future use and best overall value. 1 June, 2006 − Rev. 8 Publication Order Number: MBR150/D MBR150, MBR160 ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (Note 1) Characteristic Maximum Instantaneous Forward Voltage (Note 2) (iF = 0.1 A) (iF = 1.0 A) (iF = 3.0 A) Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2) (TL = 25°C) (TL = 100°C) Symbol vF 0.550 0.750 1.000 iR 0.5 5.0 mA Max Unit V 10 7.0 5.0 3.0 2.0 i F, INSTANTANEOUS FORWARD CURRENT (AMPS) TJ = 150°C 100°C 10 5.0 I R , REVERSE CURRENT (mA) 25°C 2.0 1.0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 0.001 0 10 TJ = 150°C 125°C 100°C 75°C 1.0 0.7 0.5 0.3 0.2 25°C 20 30 40 50 VR, REVERSE VOLTAGE (VOLTS) 60 70 Figure 2. Typical Reverse Current* *The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if VR is sufficiently below rated VR. 5.0 PF(AV) , AVERAGE FORWARD POWER DISSIPATION (WATTS) 0.1 0.07 0.05 0.03 0.02 SQUARE WAVE 4.0 3.0 p 5 10 1.0 IPK/IAV = 20 dc 2.0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1.0 2.0 3.0 4.0 5.0 vF, INSTANTANEOUS VOLTAGE (VOLTS) IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 1. Typical Forward Voltage Figure 3. Forward Power Dissipation http://onsemi.com 2 MBR150, MBR160 THERMAL CHARACTERISTICS 1.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.7 0.5 0.3 0.2 Ppk 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 t, TIME (ms) 50 tp TIME t1 Ppk DUTY CYCLE, D = tp/t1 PEAK POWER, Ppk, is peak of an equivalent square power pulse. ZqJL(t) = ZqJL • r(t) DTJL = Ppk • RqJL [D + (1 − D) • r(t1 + tp) + r(tp) − r(t1)] where DTJL = the increase in junction temperature above the lead temperature r(t) = normalized value of transient thermal resistance at time, t, from Figure 4, i.e.: r(t) = r(t1 + tp) = normalized value of transient thermal resistance at time, t1 + tp. 100 200 500 1k 2k 5k 10 k Figure 4. Thermal Response . 90 80 R qJL , THERMAL RESISTANCE, JUNCTION−TO−LEAD (° C/W) 70 60 MAXIMUM 50 TYPICAL 40 30 20 10 0 1/8 1/4 3/8 1/2 5/8 3/4 7/8 1.0 L, LEAD LENGTH (INCHES) BOTH LEADS TO HEATSINK, EQUAL LENGTH C, CAPACITANCE (pF) 100 80 70 60 50 40 30 20 0 10 20 30 40 50 60 70 80 90 10.


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