STBV68

www.DataSheet4U.com ® STBV68 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED s APPLICATIONS: ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STBV68 is designed for use in compact fluorescent lamp application. TO-92 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T amb = 25 o C Storage Temperature Max. Operating Junction Temperature Value 600 400 9 0.6 1.2 0.3 0.6 0.9 -65 to 150 150 Unit V V V A A A A W o o C C September 2000 1/4 STBV68 THERMAL DATA R thj-amb Thermal Resistance Junction-ambient Max 140 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEV I EBO Parameter Collector Cut-off Current (V BE = -1.5 V) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 600 V V BE = 9 V I C = 1 mA L = 25mH 400 Min. Typ. Max. 250...