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STS01DTP06
Dual NPN-PNP complementary Bipolar transistor
General features
VCE(sat) 0.35V
■ ■ ■ ■
h...
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STS01DTP06
Dual
NPN-
PNP complementary Bipolar
transistor
General features
VCE(sat) 0.35V
■ ■ ■ ■
hFE >100
IC 1A
High gain Low VCE(sat) Simplified circuit design Reduced component count SO-8
Applications
■ ■ ■
Push-Pull or Totem-Pole configuration MOSFET and IGBT gate driving Motor, relay and solenoid driving
Internal schematic diagram
Description
The STS01DTP06 is a Hybrid dual
NPN-
PNP complementary power bipolar
transistor manufactured by using the latest low voltage planar techlogy. The STS01DTP06 is housed in dual island SO-8 package with separated terminals for higher assembly flexibility, specifically recommended to be used in Push-Pull or Totem Pole configuration as post IGBTs and MOSFETs driver.
Order codes
Part Number STS01DTP06 Marking S01DTP06 Package SO-8 Packing Tape & reel
March 2006
Rev 2
1/11
www.st.com 11
Contents
STS01DTP06
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 2.2 Electrical characteristics (curve) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . ....