N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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AP4880M
Advanced Power Electronics Corp.
▼ Low On-Resistance ▼ Fast Switching ▼ Simple Drive Requi...
Description
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AP4880M
Advanced Power Electronics Corp.
▼ Low On-Resistance ▼ Fast Switching ▼ Simple Drive Requirement
D D D D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
G
25V 8.5mΩ 13A
ID
SO-8
S
S
S
Description
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The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G
G
The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.
S S
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 25 ± 20 13 10 50 2.5 0.02 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient
3
Value Max. 50
Unit ℃/W
Data and specifications subject to change without notice
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AP4880M
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
2
Test Conditions VGS=0V, ID=250uA
Min. 25 1 -
Typ. 0.037
Max. Units 8.5 15 3 1 25 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient ...
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