MCR12DSM

www.DataSheet4U.com MCR12DSM, MCR12DSN Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features http://onsemi.com Small Size Passivated Die for Reliability and Uniformity Low Level Triggering and Holding Characteristics Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V Pb−Free Packages are Available SCRs 12 AMPERES RMS 600 − 800 VOLTS G A K MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR12DSM MCR12DSN On−State RMS Current (180° Conduction Angles; TC = 75°C) Average On−State Current (180° Conduction Angles; TC = 75°C) Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 110°C) Circuit Fusing Consideration (t = 8.3 msec) Forward Peak Gate Power (Pulse Width ≤ 1.0 msec, TC = 75°C) Forward Average Gate Power (t = 8.3 msec, TC = 75°C) Forward Peak Gate Current (Pulse Width ≤ 1.0 msec, TC = 75°C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 600 800 IT(RMS) IT(AV) ITSM I2t PGM PG(AV) IGM TJ Tstg 12 7.6 100 41 5.0 0.5 2.0 −40 to 110 −40 to 150 A A A A2sec W W G A °C °C Y WW R12DSx 1 2 3 Value Unit V 1 2 3 4 DPAK CASE 369C STYLE 4 MARKING DIAGRAMS YWW R1 2DSxG 4 DPA...