MJD128T4G

www.DataSheet4U.com MJD128T4G (PNP) Preferred Device Complementary Darlington Power Transistor DPAK For Surface Mount Applications Features http://onsemi.com ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Rating Symbol VCEO VCB VEB Continuous Peak IC IB PD PD TJ, Tstg Value 120 120 5 8 16 120 20 0.16 1.75 0.014 −65 to + 150 Unit Vdc Vdc Vdc Adc mAdc W W/°C W W/°C °C Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Base Current Total Power Dissipation @ TC = 25°C Derate above 25°C Total Power Dissipation* @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Designed for general purpose amplifier and low speed switching applications. Monolithic Construction With Built−in Base−Emitter Shunt Resistors High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc Epoxy Meets UL 94 V−0 @ 0.125 in. ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V This is a Pb−Free Device SILICON POWER TRANSISTOR 8 AMPERES 120 VOLTS, 20 WATTS MARKING DIAGRAM 4 Base 1 1 2 3 DPAK CASE 369C STYLE 1 Collector 2 Emitter 3 Y WW J128 G = Year = Work Week = Device Code = Pb−Free Package YWW J128G 4 ORDERING INFORMATION Device MJD128T4G Package DPAK (Pb−Free) Shipping † 2500/Tape & Reel ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS Characteristic Symbol RqJC RqJA Max Unit Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient* 6.25 71.4 °C/W °C/W Stresses exceeding M...