Silicon Diode
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HSM2836C
Silicon Epitaxial Planar Diode for High Speed Switching
REJ03G0554-0400 (Previous: ADE-208...
Description
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HSM2836C
Silicon Epitaxial Planar Diode for High Speed Switching
REJ03G0554-0400 (Previous: ADE-208-030C) Rev.4.00 Mar 10, 2005
Features
Fast recovery time. MPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HSM2836C Laser Mark A4 Package Name MPAK Package Code (Previous Code) PLSP0003ZC-A (MPAK)
Pin Arrangement
3
2 1 (Top View)
1. Cathode 2. Cathode 3. Anode
Rev.4.00 Mar 10, 2005 page 1 of 4
HSM2836C
Absolute Maximum Ratings *1
(Ta = 25°C)
Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average rectified current Junction temperature Storage temperature Notes: 1. Per one device. 2. Within 1 µs forward surge current. Symbol VRM VR IFM IFSM * IO Tj Tstg
2
Value 85 80 300 4 100 125 −55 to +125
Unit V V mA A mA °C °C
Electrical Characteristics *1
(Ta = 25°C)
Item Forward voltage Symbol VF1 VF2 VF3 IR C trr Min — — — — — — Typ 0.72 0.83 0.90 — 2.5 — Max 1.0 1.0 1.2 0.1 4.0 20 Unit V Test Condition IF = 10 mA IF = 50 mA IF = 100 mA VR = 80 V VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V, RL = 50 Ω
Reverse current Capacitance Reverse recovery time Note:
µA pF ns
1. Per one device.
Rev.4.00 Mar 10, 2005 page 2 of 4
HSM2836C
Main Characteristic
10-1 10-4 10-5
Reverse current IR (A)
10-2
Forward current IF (A)
10-6
Ta= 75°C
10-3
7 5° C
25° C Ta= -25 °C
10
-7
Ta= 50°C Ta= 25°C Ta= 0°C Ta= -25°C
Ta=
Ta =
10-4
10-8 10-9 10-...
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