Silicon Diode
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HSS4148
Silicon Epitaxial Planar Diode for Various Detector, Modulator, Demodulator
REJ03G0404-0100...
Description
www.DataSheet4U.com
HSS4148
Silicon Epitaxial Planar Diode for Various Detector, Modulator, Demodulator
REJ03G0404-0100 Rev.1.00 Sep 17, 2004
Features
Low capacitance. (C = 4.0 pF max) Short reverse recovery time. (trr = 4.0 ns max) Suitable for 5mm-pitch high speed automatic insertion.
Ordering Information
Type No. HSS4148 Cathode band Black Mark 1 Package Code MHD
Pin Arrangement
1
1 Type No. Cathode band
2 1. Cathode 2. Anode
Rev.1.00 Sep 17, 2004 page 1 of 4
HSS4148
Absolute Maximum Ratings
(Ta = 25°C)
Item Peak reverse voltage Reverse voltage Average rectified current Peak forward surge current Non-Repetitive peak forward surge current Junction temperature Storage temperature Note: Symbol VR M VR IO Value 100 75 150 450 1 175 −65 to +175 Unit V V mA mA A °C °C
IFM IFSM *1
Tj Tstg
1. Forward Surge within one second duration
Electrical Characteristics
(Ta = 25°C)
Item Forward voltage Reverse current Capacitance Reverse recovery time Note: Symbol VF IR C trr *
1
Min — — — —
Typ — — — —
Max 1.0 25 4.0 4.0
Unit V nA pF ns
Test Condition IF = 10 mA VR = 20 V VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V, Irr = 1 mA, RL = 100 Ω
1. Reverse recovery time test circuit
DC Supply 0.1 µF Pulse Ro = 50 Ω Generator Trigger
3 kΩ Sampling Oscilloscope Rin = 50 Ω
Thermal Characteristics
Item Rth(j-a) Note: 1. Reference only. Typ (300) *
1
Unit °C/W
Rev.1.00 Sep 17, 2004 page 2 of 4
HSS4148
Main Characteristic
10–1 10–4 Ta = 125°C 10–5 10–2
125 °C Ta = 75°C Ta = ...
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