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K4E640412E

Samsung semiconductor

(K4E640412E / K4E660412E) 16M x 4bit CMOS Dynamic RAM


Description
www.DataSheet4U.com Industrial Temperature K4E660412E,K4E640412E CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -...



Samsung semiconductor

K4E640412E

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