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MV2106 Dataheets PDF



Part Number MV2106
Manufacturers LRC
Logo LRC
Description (MV2101 - MV2115) Silicon Tuning Diode
Datasheet MV2106 DatasheetMV2106 Datasheet (PDF)

www.DataSheet4U.com LESHAN RADIO COMPANY, LTD. Silicon Tuning Diode These devices are designed in the popular PLASTIC PACKAGE for high volumerequirements of FM Radio and TV tuning and AFC, general frequency control andtuning applications.They provide solid–state reliability in replacement of mechanical tuning methods. Also available in Surface Mount Package up to 33pF. • High Q • Controlled and Uniform Tuning Ratio • Standard Capacitance Tolerance —10% • Complete Typical Design Curves MMBV210.

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www.DataSheet4U.com LESHAN RADIO COMPANY, LTD. Silicon Tuning Diode These devices are designed in the popular PLASTIC PACKAGE for high volumerequirements of FM Radio and TV tuning and AFC, general frequency control andtuning applications.They provide solid–state reliability in replacement of mechanical tuning methods. Also available in Surface Mount Package up to 33pF. • High Q • Controlled and Uniform Tuning Ratio • Standard Capacitance Tolerance —10% • Complete Typical Design Curves MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MMBV2108LT1 MMBV2109LT1 MV2101 MV2104 MV2106 MV2108 MV2109 MV2111 MV2115 6.8-100p 30 VOLTS VOLTAGE VARIABLE CAPACITANCE DIODES 3 3 CATHODE 1 ANODE 1 2 CASE 318–08, STYLE 8 SOT– 23 (TO–236AB) MAXIMUM RATINGS(EACH DIODE) Symbol VR IF PD Forward power Dissipation @T A = 25°C Derate above 25°C Junction Temperature TJ Storage Temperature Range T stg Rating Reverse Voltage Forward Current M V 2 1 X X MMBV21XXLT1 Unit 30 Vdc 200 mAdc 280 225 mW 2.8 1.8 mW/°C +150 °C –55 to +150 °C DEVICE MARKING MMBV2101LT1=M4G MMBV2103LT1=4H MMBV2105LT1=4U MMBV2107LT1=4W MMBV2108LT1=4X MMBV2109LT1=4J Symbol V (BR)R IR TCC Min 30 — — Typ — — 280 Max — 0.1 — Unit Vdc µ Adc ppm/°C ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR=1.0µAdc) Reverse Voltage Leakage Current (VR=25Vdc,TA=25°C) Diode Capacitance Temperature Coefficient (VR=4.0Vdc,f=1.0MHz) MMBV2101~MMBV2109 –1/3 MV2101~MV2115 LESHAN RADIO COMPANY, LTD. MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MMBV2108LT1 MMBV2109LT1 MV2101 MV2104 MV2105 MV2108 MV2109 MV2111 MV2115 C Device V R T , Diode Capacitance = 4.0 Vdc, f = 1.0 MHz pF Min 6.1 9.0 10.8 13.5 19.8 24.3 29.7 42.3 90 Nom 6.8 10 12 15 22 27 33 47 100 Max 7.5 11 13.2 16.5 24.2 29.7 36.3 51.7 110 Q, Figure of Merit V R = 4.0 Vdc, f = 50 MHz Typ 450 400 400 400 350 300 200 150 100 T R, Tuning Ratio C 2 /C 30 f = 1.0 MHz Min 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.6 Typ 2.7 2.9 2.9 2.9 2.9 3.0 3.0 3.0 3.0 Max 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.3 MMBV2101LT1/MV2101 MMBV2103LT1 MV2104 MMBV2105LT1/MV2105 MMBV2107LT1 MMBV2108LT1/MV2108 MMBV2109LT1/MV2109 MV2111 MV2115 MMBV2101LT1, MMBV2103LT1, MMBV2105LT1, MMBV2107LT1 thru MMBV2109LT1, are also available in bulk. Use the device title and drop the “T1” suffix when ordering any of these devices in bulk. PARAMETER TEST METHODS 4.T CC,DIODE CAPACITANCE TEMPERATURE COEFFICIENT TCC is guaranteed by comparing CT at VR=4.0Vdc,f=1.0MHz, TA= – 65°C with CT at VR=4.0Vdc,f=1.0MHz,TA= +85°C in the following equation,which defines TC C: CT(+85°C) – CT(–65°C ) 106 . TC C = 85+65 C T(25°C) Accuracy limited by measurement of CT to±0.1pF. 1. C T , DIODE CAPACITANCE (C T = C C + C J ). C T is measured at 1.0 MHz using a ca-pacitance bridge (Boonton Electronics Model 75A or equivalent). 2. T R, TUNING RATIO T R is the ratio of C T measured at 2.0 Vdc divided by C T measured at 30 Vdc. 3. Q, FIGURE OF MERIT Q is calculated by taking the G.


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