MMBV809LT1

www.DataSheet4U.com MMBV809LT1 Preferred Device Silicon Tuning Diode This device is designed for 900 MHz frequency control and tuning applications. It provides solid−state reliability in replacement of mechanical tuning methods. Features Controlled and Uniform Tuning Ratio Available in Surface Mount Package Available in 8 mm Tape and Reel Pb−Free Packages are Available http://onsemi.com 4.5−6.1 pF VOLTAGE VARIABLE CAPACITANCE DIODE 1 ANODE 3 CATHODE MAXIMUM RATINGS Rating Reverse Voltage Forward Current Total Power Dissipation (Note 1) @ TA = 25°C Derate above 25°C Junction Temperature Storage Temperature Range Symbol VR IF PD 225 1.8 TJ Tstg +125 −55 to +125 mW mW/°C °C °C Value 20 20 Unit Vdc mAdc 1 2 3 SOT−23 (TO−236) CASE 318 STYLE 8 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR5 Board 1.0 x 0.75 x 0.62 in. MARKING DIAGRAM 5K M G G 1 5K = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device MMBV809LT1 MMBV809LT1G MMBV809LT3 MMBV809LT3G Package SOT−23 SOT−23 (Pb−Free) SOT−23 Shipping † 3,000 / Tape & Ree...