Silicon Tuning Diode
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Silicon Tuning Diode
This device is designed in the surface Mount package for general frequency con...
Description
www.DataSheet4U.com
Silicon Tuning Diode
This device is designed in the surface Mount package for general frequency control and tuning applications.It provides solid-state reliability in replacement of mechanical tuning methods. High Q with Guaranteed Minimum Values at VHF Frequencies Controlled and Uniform Tuning Ratio Available in Surface Mount Package
MMBV409LT1 MV409
VOLTAGE VARIABLE CAPACITANCE DIODES
3
3 CATHODE
1 ANODE
1 2
CASE 318–08, STYLE 8 SOT– 23 (TO–236AB)
MAXIMUM RATINGS(EACH DIODE)
Rating Reverse Voltage Forward Current Device Dissipation @T A = 25°C Derate above 25°C Junction Temperature Storage Temperature Range Symbol VR IF PD TJ T stg M B V 4 0 9 MMBV409LT1 Unit 20 20 Vdc 200 200 mAdc 280 225 mW 2.8 1.8 mW/°C +125 °C –55 to +150 °C
DEVICE MARKING
MMBV409LT1=X5,MV409=MV409
ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)
Characteristic Reverse Breakdown Voltage (IR=10µAdc) Reverse Voltage Leakage Current (V R=15Vdc) Diode Capacitance Temperature Coefficient Symbol V (BR)R I Min 20 — — Typ — — 300 Max — 0.1 — Unit Vdc µ Adc ppm/°C
R
T CC
Device Type
C T Diode Capacitance V R =3.0Vdc,f=1.0MHz pF Min Nom
29
Q,Figure of Merit C R ,Capacitance Ratio C 3/ C 8 V R =3.0Vdc f=1.0MHz(1) f=50MHz Min
200
Max
32
Min
1.5
Max
1.9
MMBV409LT1,MV409
26
1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 8 vdc
I2–1/2
MMBV409LT1 MV409
TYPICAL CHARACTERISTICS
40 1000
C T , DIODE CAPACITANCE (pF)
Q , FIGURE OF MERIT
32
2...
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