MMJT9410

www.DataSheet4U.com MMJT9410 Preferred Device Bipolar Power Transistors NPN Silicon Features Collector −Emitter Sustaining Voltage − High DC Current Gain − VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc http://onsemi.com hFE = 85 (Min) @ IC = 0.8 Adc = 60 (Min) @ IC = 3.0 Adc Low Collector −Emitter Saturation Voltage − VCE(sat) = 0.2 Vdc (Max) @ IC = 1.2 Adc = 0.45 Vdc (Max) @ IC = 3.0 Adc SOT−223 Surface Mount Packaging Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B; > 8000 V Machine Model, C; > 400 V Pb−Free Package is Available POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE(sat) = 0.2 VOLTS C 2,4 4 C MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Base Current − Continuous Collector Current − Continuous − Peak Symbol VCEO VCB VEB IB IC PD Value 30 45 ± 6.0 1.0 3.0 5.0 3.0 24 1.7 0.75 TJ, Tstg −55 to +150 °C A Y W 9410 G Unit Vdc Vdc Vdc Adc Adc W mW/°C W 1 B1 E3 Schematic B C E 1 2 3 Top View Pinout MARKING DIAGRAM Total Power Dissipation @ TC = 25°C Derate above 25°C Total PD @ TA = 25°C mounted on 1” sq. (645 sq. mm) Collector pad on FR−4 bd material Total PD @ TA = 25°C mounted on 0.012” sq. (7.6 sq. mm) Collector pad on FR−4 bd material Operating and Storage Junction Temperature Range SOT−223 (TO−261) CASE 318E STYLE 1 1 AYW 9410 G G THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient on 1” sq. (645 sq. mm) Collector...