NAND04GA3C2A

www.DataSheet4U.com NAND04GA3C2A NAND04GW3C2A 4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory Features ■ High density multi-level Cell (MLC) NAND Flash memories: – Up to 128 Mbit spare area – Cost effective solutions for mass storage applications NAND interface – x8 bus width – Multiplexed Address/ Data Supply voltages – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations. – VDDQ = 1.7 to 1.95 or 2.7 to 3.6V for I/O buffers. Page size: (2048 + 64 spare) Bytes Block size: (256K + 8K spare) Bytes Page Read/Program – Random access: 60µs (max) – Sequential access: 60ns(min) – Page Program Operation time: 800µs (typ) Cache Read mode – Internal Cache Register to improve the read throughput Fast Block Erase – Block erase time: 1.5ms (typ) Status Register Electronic Signature Serial Number option Product List Reference NAND04Gx3C2A NAND04GW3C2A Part Number NAND04GA3C2A 4 Gbits Density ■ ■ ■ TSOP48 12 x 20mm ■ Chip Enable ‘don’t care’ – for simple interface with microcontroller Data Protection – Hardware Program/Erase locked during power transitions Embedded Error Correction Code (ECC) – Internal ECC accelerator – Easy ECC Command Interface Data integrity – 10,000 Program/Erase cycles (with ECC) – 10 years Data Retention ECOPACK® package available Development tools – Bad Blocks Management and Wear Leveling algorithms – File System OS Native reference software – Hardware simulation models ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Table 1. November 2006 R...