TBN6301

www.DataSheet4U.com Preliminary Specification NPN SILICON RF TRANSISTOR SOT323 TBN6301 series Unit in mm 2.1±0.1 1.25±0.05 □ Applications - UHF and VHF wide band amplifier 2.0±0.2 1.30±0.1 1 3 2 0.30±0.1 0.1 Min. □ Features - High gain bandwidth product fT = 6 GHz @ VCE = 3 V, IC = 10 mA fT = 7.5 GHz @ VCE = 5 V, IC = 20 mA - High power gain |S21|2 = 9 dB @ VCE = 3 V, IC = 10 mA, f = 1 GHz - Low noise figure NF = 1.4 dB @ VCE = 3 V, IC = 10 mA, f = 1 GHz 0.90±0.1 Pin Configuration (TBN6301U) 1. Base 2. Emitter 3. Collector □ Absolute Maximum Ratings (TA = 25 ℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Operating Junction Temperature Storage Temperature Symbol BVCBO BVCEO BVEBO IC Ptot Tj Tstg Ratings 20 8 3 75 150 150 -65 ~ 150 Unit V V V mA mW ℃ ℃ Caution : Electro Static Discharge sensitive device http://www.tachyonics.co.kr Dec. 2005. 0~0.1 Page 1 of 6 Rev. 1.0 0.15±0.05 Preliminary Specification □ Electrical Characteristics (TA = 25 ℃) Parameter Collector Cut-off Current Symbol ICBO ICEO Emitter Cut-off Current DC Current Gain Gain Bandwidth Product IEBO hFE fT Test Conditions VCB = 15 V, IE = 0 mA VCE = 8 V, IB = 0 mA VEB = 2 V, IC = 0 mA VCE = 3 V, IC = 10 mA VCE = 3 V, IC = 10 mA VCE = 5 V, IC = 20 mA Insertion Power Gain |S21|2 VCE = 3 V, IC = 10 mA, f = 1 GHz VCE = 5 V, IC = 20 mA, f = 1 GHz Noise Figure Reverse Transfer Capacitance NF Cre VCE = 3 V, IC = 10 mA,...