BU508AFI

www.DataSheet4U.com UTC BU508 AFI NPN EPITAXIAL SILICON TRANSISTOR TO-3PML 1. 2. BASE COLLECTOR EMITTER SILICON DIFFUSED POWER TRANSISTOR DESCRIPTION The UTC BU508AFI is high voltage, high speed switching NPN transistors in a plastic envelope, primarily for use in horizontal deflection circuites of colour television receivers. 1 2 3 3. Features * TV color horizontal deflection. * With TO-3PML fully isolated package. Absolute Maximum Rating Tc=25°C PARAMETER Collector-base voltage(VBE=0) Collector-emitter voltage(IB=0) Emitter-base Voltage(IC=0) Collector peak current Collector current Collector power dissipation Junction temperature Storage temperature SYMBOL VCBO VCEO VEBO Icp Ic Pc Tj Tstg VALUE 1500 700 10 15 8 60 150 -65~150 UNIT V V V A A W °C °C ELECTRICAL CHARACTERISTICS Tc=25°C PARAMETER Collector-base cut off current Emitter-base cut off current Collector-emitter Sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base current peak value SYMBOL ICBO IEBO VCEO(sus) VEBO VCE(SAT) VBE(SAT) HFE TEST CONDITIONS VcE=1500V, VBE=0 VEB=5V, IC=0 IC=100mA, IB=0 IE=10mA, IC=0 IC=4.5A, IB=2A IC=4.5A, IB=2A IC=100mA, VCE=5V MIN MAX 2.0 100 UNIT mA uA V V V V 700 10 1.0 1.3 30 6 UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R214-001,A UTC BU508 AFI NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentar...