DatasheetsPDF.com

LT1160

Linear Technology

Half-/Full-Bridge N-Channel Power MOSFET

LT1160/LT1162 Half-/Full-Bridge N-Channel Power MOSFET Drivers U U FEATURES ■ Floating Top Driver Switches Up to 60V ■...


Linear Technology

LT1160

File Download Download LT1160 Datasheet


Description
LT1160/LT1162 Half-/Full-Bridge N-Channel Power MOSFET Drivers U U FEATURES ■ Floating Top Driver Switches Up to 60V ■ Drives Gate of Top N-Channel MOSFET above Load HV Supply ■ 180ns Transition Times Driving 10,000pF ■ Adaptive Nonoverlapping Gate Drives Prevent Shoot-Through ■ Top Drive Protection at High Duty Cycles ■ TTL/CMOS Input Levels ■ Undervoltage Lockout with Hysteresis ■ Operates at Supply Voltages from 10V to 15V ■ Separate Top and Bottom Drive Pins U APPLICATIO S ■ PWM of High Current Inductive Loads ■ Half-Bridge and Full-Bridge Motor Control ■ Synchronous Step-Down Switching Regulators ■ 3-Phase Brushless Motor Drive ■ High Current Transducer Drivers ■ Class D Power Amplifiers DESCRIPTIO The LT®1160/LT1162 are cost effective half-/full-bridge N-channel power MOSFET drivers. The floating driver can drive the topside N-channel power MOSFETs operating off a high voltage (HV) rail of up to 60V. The internal logic prevents the inputs from turning on the power MOSFETs in a half-bridge at the same time. Its unique adaptive protection against shoot-through currents eliminates all matching requirements for the two MOSFETs. This greatly eases the design of high efficiency motor control and switching regulator systems. During low supply or start-up conditions, the undervoltage lockout actively pulls the driver outputs low to prevent the power MOSFETs from being partially turned on. The 0.5V hysteresis allows reliable operation even with slowly varying supplies. The LT...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)