MMBTA56

www.DataSheet4U.com UNISONIC TECHNOLOGIES CO., LTD MMBTA56 AMPLIFIER TRANSISTOR FEATURES 3 * Collector-Emitter Voltage: VCEO=-80V * Collector Dissipation: PD=350mW PNP SILICON TRANSISTOR 1 2 SOT-23 *Pb-free plating product number: MMBTA56L ORDERING INFORMATION Order Number Normal Lead Free Plating MMBTA56-AE3-R MMBTA56L-AE3-R Package SOT-23 Pin Assignment 1 2 3 E B C Packing Tape Reel MMBTA56L-AE3-R (1)Packing Type (2)Package Type (3)Lead Plating (1) R: Tape Reel (2) AE3: SOT-23 (3) L: Lead Free Plating, Blank: Pb/Sn MARKING 2G www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 5 QW-R206-090,A MMBTA56 ABSOLUTE MAXIMUM RATINGS (TA=25 ) PNP SILICON TRANSISTOR PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -80 V Emitter-Base Voltage VEBO -4 V Collector Current - Continuous IC -500 mA 350 mW Total Device Dissipation(Note 1) PD 2.8 mW/ Derate Above 25 Junction Temperature TJ +150 Storage Temperature TSTG -55 ~ +150 Note 1. Device mounted on FR-4=1.6×1.6×0.06 in 2. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Thermal Resistance, Junction to Ambient SYMBOL θJA MAX 357 UNIT /W ELECTRICAL CHARACTERISTICS (Ta=25 , unless otherwise specified) PARAMETER OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 1) Emitter-Base Breakd...