MPS4126

www.DataSheet4U.com MPS4126 Amplifier Transistor PNP Silicon Features Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCE VCB VEB IC PD PD TJ, Tstg Value −25 −25 −4.0 −200 625 5.0 1.5 12 −55 to +150 Unit Vdc Vdc Vdc mAdc W mW/°C W mW/°C °C http://onsemi.com COLLECTOR 3 2 BASE 1 EMITTER MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W 1 2 3 TO−92 CASE 29−11 STYLE 1 MPS 4126 AYWW G G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MPS4126 A Y WW G = Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device MPS4126RLRA MPS4126RLRAG Package TO−92 TO−92 (Pb−Free) Shipping † 2,000/Tape & Reel 2,000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications...