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MPS6602

ON Semiconductor

Amplifier Transistor

www.DataSheet4U.com MPS6601, MPS6602 (NPN) MPS6651, MPS6652 (PNP) MPS6602 and MPS6652 are Preferred Devices Amplifier ...


ON Semiconductor

MPS6602

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www.DataSheet4U.com MPS6601, MPS6602 (NPN) MPS6651, MPS6652 (PNP) MPS6602 and MPS6652 are Preferred Devices Amplifier Transistors Features Voltage and Current are Negative for PNP Transistors Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector −Emitter Voltage MPS6601/6651 MPS6602/6652 Collector −Base Voltage MPS6601/6651 MPS6602/6652 Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range VEBO IC PD PD TJ, Tstg VCBO 25 30 4.0 1000 625 5.0 1.5 12 −55 to +150 Vdc mAdc W mW/°C W mW/°C °C Symbol VCEO 25 40 Vdc Value Unit Vdc 2 BASE http://onsemi.com COLLECTOR 3 2 BASE NPN 1 EMITTER PNP 1 EMITTER COLLECTOR 3 1 2 3 TO−92 CASE 29−11 STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient (Note 1) Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. RqJA is measured with the device soldered into a typical printed circuit board. MPS 66xy AYWW G G MPS66xy = Device Code x = 0 or 5 y = 1 or 2 A = Assembly Location Y = Year WW = Work Week G = Pb−Free P...




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