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MPS6601, MPS6602 (NPN) MPS6651, MPS6652 (PNP)
MPS6602 and MPS6652 are Preferred Devices
Amplifier ...
www.DataSheet4U.com
MPS6601, MPS6602 (
NPN) MPS6651, MPS6652 (
PNP)
MPS6602 and MPS6652 are Preferred Devices
Amplifier
Transistors
Features
Voltage and Current are Negative for
PNP Transistors Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Collector −Emitter Voltage MPS6601/6651 MPS6602/6652 Collector −Base Voltage MPS6601/6651 MPS6602/6652 Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range VEBO IC PD PD TJ, Tstg VCBO 25 30 4.0 1000 625 5.0 1.5 12 −55 to +150 Vdc mAdc W mW/°C W mW/°C °C Symbol VCEO 25 40 Vdc Value Unit Vdc 2 BASE
http://onsemi.com
COLLECTOR 3 2 BASE
NPN 1 EMITTER
PNP 1 EMITTER COLLECTOR 3
1 2 3
TO−92 CASE 29−11 STYLE 1
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction−to−Ambient (Note 1) Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. RqJA is measured with the device soldered into a typical printed circuit board.
MPS 66xy AYWW G G
MPS66xy = Device Code x = 0 or 5 y = 1 or 2 A = Assembly Location Y = Year WW = Work Week G = Pb−Free P...