MPSA14

www.DataSheet4U.com MPSA13/MPSA14 Plastic-Encapsulate Transistros NPN Darlington Transistor 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 TO-92 Maximum Ratings(T =25 C Unless O therwise Specified) A Rating Collector-Emitter Voltage Collector-base Voltage Emitter-base Voltage Collector Current Total Power Dissipation(TA =25˚C) Operating Junction and Storage Temperature Range Symbol VCEO VCBO VEBO IC PD TJ,Tstg Value 30 30 10 500 0.625 - 55~+150 Unit V V V mA W ˚C Electrical Characteristics (TA=25C Unless otherwise noted) Characteristic Collector-base breakdown voltage IC=100µA,IE=0 IC=1mA,IB=0 Symbol V( BR) CB O V( BR) CE O V( BR) EB O I CB O I EBO MPSA13 MPSA14 MPSA13 MPSA14 Min 30 30 10 Max 0.1 0.1 Unit V V V µA µA V V MHz Collector-emitter breakdown voltage Emitter-base breakdown voltage IE=100µA,IC=0 VCB=30V,IE=0 VEB=10V,IC=0 Collector cut-off current Emitter cut-off current DC curent gain1 VCE=5V,IC=10mA VCE=5V,IC=100mA H FE (1) H FE (2) V CE (sat) V BE( on) 5000 10000 10000 20000 1.5 2.0 Collector-emitter saturation voltage1 IC=100mA,IB=0.1mA VCE=5V,IC=10mA Base-emitter voltage1 Transition frequency VCE=5V,IC=10mA,F=100Mhz fT 125 - Note: 1.Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%. http://www.weitron.com.tw WEITRON 1/4 17-Jun-05 MPSA13/MPSA14 20 TJ = 25 C |hfe|, SMALL-SIGNAL CURRENT GAIN 4.0 VCE = 5.0 V f = 100 MHz TJ = 25 C WE IT R ON C, CAPACITANCE (pF) 10 7.0 5.0 2.0 Cibo Cobo 1.0 0.8 0.6 0.4 3.0 2.0 0.04 0.1 0.2 0.4 1.0 2.0 4.0 V...