UN1518

www.DataSheet4U.com UNISONIC TECHNOLOGIES CO., LTD UN1518 POWER (SWITCHING) TRANSISTOR „ FEATURES NPN SILICON TRANSISTOR * Bipolar power transistor * High current switching * High hFE * Low VCE(SAT) *Pb-free plating product number: UN1518L „ ORDERING INFORMATION Order Number Normal Lead Free Plating UN1518-AE3-R UN1518L-AE3-R Package SOT-23 Pin Assignment 1 2 3 E B C Packing Tape Reel www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 3 QW-R206-088,A UN1518 „ NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise stated) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5 V Collector Current (Pulse) Note 2 ICM 6 A Collector Current (DC) IC 2.5 A Base Current IB 500 mA Total Device Dissipation PD 625 mW ℃ Storage Temperature TSTG -50 ~ +150 Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse test tp=300μs. δ ≤ 2% „ ELECTRICAL CHARACTERISTICS MIN 20 20 5 TYP 100 27 8.3 MAX UNIT V V V nA nA nA mV V V PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO IC=100µA Collector-Emitter Breakdown Voltage BVCEO* IC=10mA Emitter-Base Breakdown Voltage BVEBO IE=100µA Collector Cut-Off Current ICBO VCB=16V Emitter Cut-Off Current IEBO VEB=4V Collector Emitter Cut-Off Current ICES VCES=1...