Document
UNISONIC TECHNOLOGIES CO., LTD
2SA2016
PNP PLANAR TRANSISTOR
PNP EPITAXIAL PLANAR TRANSISTOR
APPLICATIONS
* Relay drivers, lamp drivers, motor drivers, strobes.
FEATURES
*High current capacitance. *Low collector-to-emitter saturation voltage. *High-speed switching *High allowable power dissipation.
ORDERING INFORMATION
Order Number
Lead Free
Halogen Free
- 2SA2016G-AB3-R
2SA2016L-TN3-R
2SA2016G-TN3-R
Note: Pin Assignment: B: Base C: Collector E: Emitter
Package
SOT-89 TO-252
Pin Assignment 123 BCE BCE
Packing
Tape Reel Tape Reel
MARKING
SOT-89
2SA2016G 1
Date Code
TO-252
www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd
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PNP PLANAR TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage Emitter-Base Voltage
VCEO VEBO
-50 -6
V V
Collector Dissipation Mounted on a SOT-89
ceramic board (250mm2*0.8mm)
TO-252
PC
1.3 1.9
W W
Collector Dissipation (TC=25C)
SOT-89 TO-252
PC
3.5 15
W W
Collector Current Collector Current
IC -7 A ICP -10 A
Base Current Junction Temperature
IB -1.2 A TJ 150 C
Storage Temperature
TSTG
-55 ~ +150
C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL RESISTANCES CHARACTERISTICS
PARAMETER Junction to Ambient
Junction to Case
SOT-89 TO-252 SOT-89 TO-252
SYMBOL θJA
θJC
RATINGS 96.2 65.8 35.7 8.3
UNIT °C/W °C/W °C/W °C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise noted)
PARAMETER Collector-to-Base Breakdown Voltage Collector-to- Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage Gain Bandwidth Product Output Capacitance Turn-on Time Storage Time Fall Time
SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE
VCE(SAT)
VBE(SAT) fT
Cob tON tSTG tF
TEST CONDITIONS IC= -10µA, IE=0 IC= -1mA, RBE=∞ IC=0, IE= -10µA VCB= -40V, IE=0 VEB= -4V, IC=0 VCE= -2V, IC= -500mA IC= -3.5A, IB= -175mA IC= -2A, IB= -40mA IC= -2A, IB= -40mA VCE= -10V, IC= -500mA VCB= -10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit
MIN TYP MAX UNIT -50 V -50 V -6 V
-0.1 µA -0.1 µA 200 560 -0.23 -0.39 V -0.24 -0.40 V -0.83 -1.2 V 290 MHz 50 pF 40 ns 225 ns 25 ns
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www.unisonic.com.tw
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SWITCHING TIME TEST CIRCUIT
PW=20μs D.C. 1% INPUT
IB2 IB1
OUTPUT
50Ω
VR
RB +
+
RL
100μF 470μF
VBE=5V
VCC= -25V
-20IB1=20IB2=IC= 2.5A
PNP PLANAR TRANSISTOR
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www.unisonic.com.tw
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TYPICAL CHARACTERISTICS
PNP PLANAR TRANSISTOR
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TYPICAL CHARACTERISTICS(Cont.)
PNP PLANAR TRANSISTOR
Collector Current ,Ic -A
Collector Current Ic -A
Collector-to-Emitter Saturation Voltage, VCE(SAT) -mV
DC Current Gain, hFE
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www.unisonic.com.tw
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PNP PLANAR TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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