2SB1116

DATA SHEET SILICON TRANSISTORS 2SB1116, 1116A PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES Low VCE(sat) VCE(sat) = −0.20 V TYP. (IC = −1.0 A, IB = −50 mA) High PT in small dimension with general-purpose PT = 0.75 W, VCEO = −50/−60 V, IC(DC) = −1.0 A Complementary transistor with 2SD1616 and 1616A ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* PT Tj Tstg Ratings 2SB1116 2SB1116A −60 −80 −50 −60 −6.0 −1.0 −2.0 0.75 150 −55 to +150 * PW ≤ 10 ms, duty cycle ≤ 50% ELECTRICAL CHARACTERISTICS (Ta = 25°C) Unit V V V A A W °C °C Parameter Symbol Conditions Collector cutoff current Emitter cutoff current DC current gain DC current gain DC base voltage Collector saturation voltage Base saturation voltage Output capacitance Gain bandwidth product Turn-on time Storage temperature Fall time ICBO IEBO hFE1 ** hFE2 ** VBE ** VCE(sat) ** VBE(sat) ** Cob fT ton tstg tf VCB = −60 V, IE = 0 VEB = −6.0 V, IC = 0 VCE = −2.0 V, IC = −100 mA VCE = −2.0 V, IC = −1.0 A VCE = −2.0 V, IC = −50 mA IC = −1.0 A, IB = −50 mA IC = −1.0 A, IB = −50 mA VCB = −10 V, IE = 0, f = 1.0 MHz VCE = −2.0 V, IC = −100 mA VCC = −10 V, IC = −100 mA IB1 = −IB2 = −10 mA, VBE(off) = 2 to 3 V ** Pulse test PW ≤ 350 µs, du...