2SC5765

2SC5765 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5765 MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS Unit: mm · Low Saturation Voltage: VCE (sat) (1) = 0.27 V (max.) (IC = 3 A/IB = 60 mA) Maximum Ratings (Ta = 25°C) Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector power dissipation Junction temperature Storage temperature range DC Pulsed Symbol VCBO VCEO VEBO IC ICP PC (Note1) Tj Tstg Rating 15 10 7 5 9 550 150 -55 to 150 Unit V V V A mW °C °C JEDEC JEITA TOSHIBA Weight: 0.13 g ― ― 2-4E1A www.DataSheet4U.com Note 1: When a device is mounted on a glass epoxy board (35 mm ´ 30 mm ´ 1mm) Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current Emitter cut-off current Collector-Emitter breakdown voltage Symbol ICBO IEBO V(BR)CEO Test Condition VCB = 15 V, IE = 0 VEB = 5 V, IC = 0 IC = 1 mA, IB = 0 Min. ¾ ¾ 10 450 320 170 ¾ ¾ Typ. ¾ ¾ ¾ ¾ ¾ ¾ ¾ 25 Max. 0.1 0.1 ¾ 700 ¾ ¾ 0.27 ¾ V pF Unit mA mA V hFE(1) (Note2) VCE = 1.5 V, IC = 0.5 A DC current gain hFE(2) (Note2) VCE = 1.5 V, IC = 2 A hFE(3) (Note2) VCE = 1.5 V, IC = 5 A Collector-Emitter saturation voltage Collector-Output Capacitance VCE (sat) (Note2) Cob IC = 3 A, IB = 60 mA VCB = 10 V, IE = 0, f = 1 MHz Note 2: Pulse test 1 2002-01-16 2SC5765 IC – VCE 5 60 4 30 20 Common-Emitter Ta = 25°C 10 3 8 6 2 4 2 1 1 0 0 IB = 0 mA 0.5 1.0 1.5 2.0 0.001 0.01 1 Common-Emitter IC/IB = 50 VCE (sat) – IC Colle...