2SC5765

UNISONIC TECHNOLOGIES CO., LTD 2SC5765 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER AMPLIFIER STROBO FLASH  DESCRIPTION medium power amplifier applications strobo flash applications  FEATURES * Low Saturation Voltage: VCE(sat) = 0.27 V (max.), (Ic = 3A / IB =60 mA)  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SC5765L-T9S-K 2SC5765G-T9S-K TO-92SP Note: Pin Assignment: E: Emitter C: Collector B: Base Pin Assignment 1 2 3 E C B Packing Bulk  MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 4 QW-R216-002.D 2SC5765 NPN EPITAXIAL SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATING ( TA=25°C) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage Collector-Emitter Voltage VCBO 15 V VCEO 10 V Emitter-Base Voltage VEBO 7 V Collector Current DC Plused IC 5 A 9 A Collector Power Dissipation (Note 2) PC 550 mW Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. When a device is mounted on a glass epoxy board (35 mm×30 mm×1mm)  ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector-Emitter Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain (Note) Collector-Emitter Saturation Voltage (Note)...