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SILICON TRANSISTOR. 2SD718 Datasheet

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SILICON TRANSISTOR. 2SD718 Datasheet






2SD718 TRANSISTOR. Datasheet pdf. Equivalent




2SD718 TRANSISTOR. Datasheet pdf. Equivalent





Part

2SD718

Description

NPN EPITAXIAL SILICON TRANSISTOR



Feature


UNISONIC TECHNOLOGIES CO., LTD 2SD718 NPN EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION 1  FEAT URES * Recommended for 45~50W Audio Fre quency *Amplifier Output Stage. * Compl ementary to 2SB688. TO-247 1 TO-3P ORDERING INFORMATION Ordering Numbe r Lead Free Halogen Free Package 2S D718L-x-T47-T 2SD718G-x-T47-T TO-247 2SD718L-x-T3P-T 2SD7.
Manufacture

UTC

Datasheet
Download 2SD718 Datasheet


UTC 2SD718

2SD718; 18G-x-T3P-T TO-3P Note: Pin Assignment : B: Base C: Collector E: Emitter Pin Assignment 1 2 3 B C E B C E Packing Tube Tube 2SD718G-x-T47-T (1) Packing Type (2)Package Type (3)Rank (4 )Green Package (1) T: Tube (2) T47: TO -247, T3P: TO-3P (3) x: refer to Classi fication of hFE (4) G: Halogen Free and Lead Free, L: Lead Free  MARKING Lot Code UTC 2SD718.


UTC 2SD718

1 L: Lead Free G: Halogen Free Date Co de www.unisonic.com.tw Copyright © 20 20 Unisonic Technologies Co., Ltd 1 of 4 QW-R214-003.C 2SD718 NPN EPITAXIAL SILICON TRANSISTOR  ABSOLUTE MAXIM UM RATING (TA=25°C, unless otherwise s pecified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage VCEO 1 20 V Emitter-Base Vo.


UTC 2SD718

ltage VEBO 5 V Collector Current Ic 10 A Base Current IB 1 A Collec tor Power Dissipation TO-247 (TC=25° C) TO-3P PC 78 W 80 W Junction T emperature TJ +150 °C Storage Temp erature Range TSTG -55 ~ +150 °C N ote: Absolute maximum ratings are those values beyond which the device could b e permanently damaged. Absolute maximu m ratings are stress .

Part

2SD718

Description

NPN EPITAXIAL SILICON TRANSISTOR



Feature


UNISONIC TECHNOLOGIES CO., LTD 2SD718 NPN EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION 1  FEAT URES * Recommended for 45~50W Audio Fre quency *Amplifier Output Stage. * Compl ementary to 2SB688. TO-247 1 TO-3P ORDERING INFORMATION Ordering Numbe r Lead Free Halogen Free Package 2S D718L-x-T47-T 2SD718G-x-T47-T TO-247 2SD718L-x-T3P-T 2SD7.
Manufacture

UTC

Datasheet
Download 2SD718 Datasheet




 2SD718
UNISONIC TECHNOLOGIES CO., LTD
2SD718
NPN EPITAXIAL SILICON TRANSISTOR
HIGH POWER AMPLIFIER
APPLICATION
1
FEATURES
* Recommended for 45~50W Audio Frequency *Amplifier Output
Stage.
* Complementary to 2SB688.
TO-247
1
TO-3P
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
2SD718L-x-T47-T
2SD718G-x-T47-T
TO-247
2SD718L-x-T3P-T
2SD718G-x-T3P-T
TO-3P
Note: Pin Assignment: B: Base C: Collector E: Emitter
Pin Assignment
1
2
3
B
C
E
B
C
E
Packing
Tube
Tube
2SD718G-x-T47-T
(1)Packing Type
(2)Package Type
(3)Rank
(4)Green Package
(1) T: Tube
(2) T47: TO-247, T3P: TO-3P
(3) x: refer to Classification of hFE
(4) G: Halogen Free and Lead Free, L: Lead Free
MARKING
Lot Code
UTC
2SD718
1
L: Lead Free
G: Halogen Free
Date Code
www.unisonic.com.tw
Copyright © 2020 Unisonic Technologies Co., Ltd
1 of 4
QW-R214-003.C




 2SD718
2SD718
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
120
V
Collector-Emitter Voltage
VCEO
120
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
Ic
10
A
Base Current
IB
1
A
Collector Power Dissipation
TO-247
(TC=25°C)
TO-3P
PC
78
W
80
W
Junction Temperature
TJ
+150
°C
Storage Temperature Range
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
SYMBOL
TEST CONDITIONS
V(BR)CEO IC=50mA, IB=0
ICBO VCB=120V, IE=0
IEBO VEB=5V, IC=0
hFE VCE=5V, IC=1A
VCE(sat) IC=6A, IB=0.6A
VBE VCE=5V, IC=5A
fT
VCE=5V, IC=1A
Cob VCB=10V, IE=0, f=1MHz
CLASSIFICATION OF hFE
MIN TYP MAX UNIT
120
V
10 μA
10 μA
55
160
2.0 V
1.5 V
12
MHz
170
pF
RANK
RANGE
R
55 ~ 110
O
80 ~ 160
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R214-003.C




 2SD718
2SD718
TYPICAL CHARACTERISTICS
Collector Current vs.
Collector-Emitter Voltage
12
COMMON
400 300
10
EMITTER
Tc=25
200
8
6
100
4
50
IB=20mA
2
0
0
0 2 4 6 8 10 12 14
Collector-Emitter Voltage, VCE (V)
NPN EPITAXIAL SILICON TRANSISTOR
DC Current Gain vs. Collector Current
1k
COMMON EMITTER
500
VCE=5V
300
Tc=100
100 Tc=25
50
Tc=-25
30
10
0.01 0.03 0.1 0.3 1
3 10
Collector Current, Ic (A)
Collector-Emitter Saturation
Voltage vs. Collector Current
1
COMMON EMITTER
0.5 Ic/IB=10
0.3
0.1
0.05
0.03
Tc=100
Tc=-25
Tc=25
0.01
0.01 0.03 0.1 0.3 1
3 10
Collector Current, Ic (A)
3
Safe Operating Area
0 IC MAX(PULSED) *
1 IC MAX(CONTINUOUS)
0
3
DTCcO=2P5E5R0A0TmIOSN *
t=1mS *
10mS *
100mS *
1
*SINGLE NONREPETITIVE
0.3
PULSE Tc=25CURVES MUST
BE DERATED
LINEARLY WIHT INCREASE
IN TEMPERATURE.
0.1
1
3 10 30 100 300
Collector-Emitter Voltage, VCE (V)
Collector Power Dissipation vs.
Ambient Temperature
100
Ta=Tc
80
INFINITE HEAT SINK
300×300×2mm AI
HEAT SINK
200×200×2mm AI
60
HEAT SINK
100×100×2mm AI
40
HEAT SINK
NO HEAT SINK
20
0
0 40 80 120 160 200 240
Ambient Temperature, Ta ()
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R214-003.C



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